Related papers: Simulations of a silicon pixel based on MOS Deep T…
The study of the fractional quantum Hall liquid state of two-dimensional electrons requires a non-perturbative treatment of interactions. It is possible to perform exact diagonalizations of the Hamiltonian provided one considers only a…
Gauge theory is the framework of the Standard Model of particle physics and is also important in condensed matter physics. As its major non-perturbative approach, lattice gauge theory is traditionally implemented using Monte Carlo…
Discrete fracture models with reduced-dimensional treatment of conductive and blocking fractures are widely used to simulate fluid flow in fractured porous media. Among these, numerical methods based on interface models are intensively…
Deep learning approaches to generic (non-semantic) segmentation have so far been indirect and relied on edge detection. This is in contrast to semantic segmentation, where DNNs are applied directly. We propose an alternative approach called…
In this paper, we focus on the simulation of active stereovision depth sensors, which are popular in both academic and industry communities. Inspired by the underlying mechanism of the sensors, we designed a fully physics-grounded…
We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID…
Advertising and feed ranking are essential to many Internet companies such as Facebook. Among many real-world advertising and feed ranking systems, click through rate (CTR) prediction plays a central role. In recent years, many neural…
Cold Rydberg atoms, known for their long lifetimes and strong dipole-dipole interactions that lead to the Rydberg blockade phenomenon, are among the most promising platforms for quantum simulations, quantum computation and quantum networks.…
The next generation of MAPS for future tracking detectors will have to meet stringent requirements placed on them. One such detector is the ALICE ITS3 that aims to be very light at 0.07% X/X$_{0}$ per layer and have a low power consumption…
T center defects in silicon provide an attractive platform for quantum technologies due to their unique spin properties and compatibility with mature silicon technologies. We investigate several gate protocols between single T centers,…
We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal,…
Gate controllable electronic trap detection method has been demonstrated by regulating the gate potential of MIS devices. This method is based on shift of capacitance voltage (CV) curve as well as flatband voltage (VFB) measure in less than…
Trapped ions in radio-frequency traps are among the leading approaches for realizing quantum computers, due to high-fidelity quantum gates and long coherence times. However, the use of radio-frequencies presents a number of challenges to…
Combining gaseous detectors with a high-granularity pixelated charge readout enables experimental applications which otherwise could not be achieved. This includes high-resolution tracking of low-energetic particles, requiring ultra-low…
Rydberg quantum gate serving as an indispensable computing unit for neutral-atom quantum computation, has attracted intense research efforts for the last decade. However the state-of-the-art experiments have not reached the high gate…
Tracking the dynamics of physical systems in real time is a prime application of digital quantum computers. Using a trapped-ion system with up to six qubits, we simulate the real-time dynamics of a lattice gauge theory in 1+1 dimensions,…
We improvise a novel approach to carry out first-principles simulations of graphene-based vertical field effect tunneling transistors that consist of a graphene$|${\it h}-BN$|$graphene multilayer structure. Within the density functional…
Scalable trapped-ion quantum computing requires fast and reliable transport of ions through complex, segmented radiofrequency trap architectures without inducing excessive motional excitation. We present a numerical toolchain for the…
Here, we propose a Charge Plasma (CP)-based Germanium Double Gate Tunnel Field-Effect Transistor (Ge-DGTFET) device structure, where a CP is induced in the heavily doped source region using the work function engineering of source electrode.…
We propose a method to simulate spin models in trapped ions using a digital-analog approach, consisting in a suitable gate decomposition in terms of analog blocks and digital steps. In this way, we show that the quantum dynamics of an…