Related papers: Wet etch methods for InAs nanowire patterning and …
Indium Arsenide (InAs) near surface quantum wells (QWs) are promising for the fabrication of semiconductor-superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum…
We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam…
Dense arrays of semiconductor quantum dots are currently employed in highly efficient quantum dot lasers for data communications and other applications. Traditionally, the electronic properties of such quantum nanostructures have been…
We realize strongly confined quantum dots (QDs) in InAs nanowires (NWs) by combining epitaxial crystal-phase control with chemical wet etching. A strong axial confinement is first introduced by growing closely spaced wurtzite (WZ) tunnel…
One-dimensional (1D) nanostructures - nanowires (NWs) - exhibit promising properties for integration in different types of functional devices. Their properties can be enhanced even further or tuned for a specific application by combining…
Quantum dots tuned to atomic resonances represent an emerging field of hybrid quantum systems where the advantages of quantum dots and natural atoms can be combined. Embedding quantum dots in nanowires boosts these systems with a set of…
Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero modes (MZMs). However, InAs nanowires often exhibit a high…
Assembling nanostructured building blocks into network materials unlocks macroscopic properties inaccessible with monolithic solids, notably toughness and tolerance to electrochemical alloying. A method is reported for large-scale,…
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO$_{2}$-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological…
Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single photons and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has…
We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminium…
The virtual (i.e., fundamental many body quantum theory-based, computational) synthesis method is used to establish electronic templates of about 30 non-stoichiometric nanosystems composed of nickel and oxygen atoms and ranging from about 6…
Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we…
A facile, low-temperature precipitation-based method is utilized to demonstrate the synthesis of ultra-thin and highly-uniform cesium lead bromide perovskite nanowires (NWs). The reactions facilitate the NWs crystalline nature over…
Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length…
Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p-i-n junctions to greatly enhance light emission/absorption. However, the surface curvature makes the…
The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devices operated at low temperatures. Surface passivation…
We show that fully self-assembled optically-active quantum dots (QDs) embedded in MBE-grown GaAs/AlGaAs core-shell nanowires (NWs) are coupled to the NW mechanical motion. Oscillations of the NW modulate the QD emission energy in a broad…
Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Land\'e g-factor. Integrating InSb nanowires with other materials could…
Self-assisted growth of InAs nanowires on graphene by molecular beam epitaxy is reported. Nanowires with diameter of ~50 nm and aspect ratio of up to 100 were achieved. The morphological and structural properties of the nanowires were…