Related papers: Temperature dependent nonlinear Hall effect in mac…
A comprehensive study of magnetoresistance and Hall effect has been performed for the set of the single crystals of non-magnetic metal LuB12 with the Jahn-Teller instability of the boron cage and dynamic charge stripes forming along <110>…
We present sensitive measurements of the Hall effect and magnetoresistance in CeIrIn${_5}$ down to temperatures of 50 mK and magnetic fields up to 15 T. The presence of a low temperature coherent Kondo state is established. Deviations from…
The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and filling factor in different parts of the sample. In case of…
SrRuO3 is an itinerant ferromagnet and in its thin film form when grown on miscut SrTiO3 it has Tc of ~ 150 K and strong uniaxial anisotropy. We measured both the Hall effect and the magnetoresistance (MR) of the films as a function of the…
The recent discovery of a nonsaturating linear magnetoresistance in several correlated electron systems near a quantum critical point has revealed an interesting interplay between the linear magnetoresistance and the zero-field…
In this work we provide a systematic explanation to the unusual non-monotonic behavior of the Hall resistance observed at two-dimensional electron systems. We use a semi-analytical model based on the interaction theory of the integer…
Electric current flows parallel to the outer product of an applied electric field and temperature gradient, a phenomenon we call the nonlinear chiral thermo-electric (NCTE) Hall effect. We present a general microscopic formulation of this…
Despite time-reversal breaking in momentum space, several altermagnets remain electrically silent to the primary characterization tool anomalous Hall effect, due to crystalline symmetries, jeopardizing their experimental identification.…
We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the…
The periodic response of magnetoresistance to an externally tunable parameter, such as magnetic field or chemical composition, in the bulk or an artificially designed material has been exploited for technological applications as well as to…
The thermoelectric Hall effect is the generation of a transverse heat current upon applying an electric field in the presence of a magnetic field. Here we demonstrate that the thermoelectric Hall conductivity $\alpha_{xy}$ in the…
We have performed magnetotransport experiments in the high-temperature regime (up to 50 K) of the integer quantum Hall effect for two-dimensional electron gases in semiconducting heterostructures. While the magnetic field dependence of the…
In Mn$_3$X (X=Sn, Ge) antiferromagnets domain walls are thick and remarkably complex because of the non-collinear arrangement of spins in each domain. A planar Hall effect (PHE), an electric field perpendicular to the applied current but…
Investigations of the resistivity and the Hall effect as a function of electric field and temperature in the normal state and upper part of the superconducting transition of an optimally doped, very thin film of…
The temperature dependence of 2D magnetoresistance in an applied in-plane magnetic field is theoretically considered for electrons in Si MOSFETs within the screening theory for long-range charged impurity scattering limited carrier…
The Anomalous Hall Effect was investigated in IV-VI ferromagnetic semimagnetic semiconductors of Sn1-xMnxTe codoped with either Eu or Er. The analysis of experimental data: Hall resisitivity and magnetization showed that AHE coefficient RS…
Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a topological semimetal WTe2 single crystal in the temperature range from 12 to 200 K under magnetic fields up to 9 T. It has been found that quadratic…
The observation of a Hall effect, a finite transverse voltage induced by a longitudinal current, usually requires the breaking of time-reversal symmetry, for example through the application of an external magnetic field or the presence of…
Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field…
The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall…