We present a systematical study of thermal Hall effect on a bismuth single crystal by measuring resistivity, Hall coefficient, and thermal conductivity under magnetic field, which shows a large thermal Hall coefficient comparable to the largest one in a semiconductor HgSe. We discuss that this is mainly due to a large mobility and a low thermal conductivity comparing theoretical calculations, which will give a route for controlling heat current in electronic devices.
@article{arxiv.1203.2237,
title = {Large thermal Hall coefficient in bismuth},
author = {W. Kobayashi and Y. Koizumi and Y. Moritomo},
journal= {arXiv preprint arXiv:1203.2237},
year = {2015}
}