Related papers: Temperature dependent nonlinear Hall effect in mac…
This paper describes a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample or the use of a resonant cavity. Our method consists of…
Temperature dependent Ferromagnetic Resonance measurements performed as a function of diameter on Nickel nanowire arrays reveal several interesting features in these systems. With diameter decrease from 100 nm to 15 nm, a transition induced…
The origin of anomalous Hall effect (AHE) in ferromagnetic metallic glasses (MGs) is not yet understood completely. Here, the AHE is explored in Fe78Si9B13 MGs. We find the behavior of resistivity at low temperature seems to be more likely…
Using finite-temperature Lanczos method the frequency-dependent Hall response is calculated numerically for the t-J model on the square lattice and on ladders. At low doping, both the high-frequency RH* and the d.c. Hall coefficient RH0…
We report the Hall resistivity, $\rho_{xy}$ of polycrystalline SmFeAsO$_{1-x}$F$_{x}$ for four different fluorine concentrations from the onset of superconductivity through the collapse of the structural phase transition. For the two more…
Tilted off-plane magnetic anisotropy induces two unusual characteristic magnetotransport phenomena: extraordinary Hall effect in the presence of an in-plane magnetic field, and non-monotonic anisotropic magnetoresistance in the presence of…
We use bosonization to analyze the ground state Hall response of interacting bosonic N-leg ladders threaded by a flux. We derive an explicit expression of the Hall imbalance in a perturbative expansion in the band curvature, retaining fully…
Peculiarities of transport properties of three- and two-dimensional half-metallic ferromagnets are investigated, which are connected with the absence of spin-flip scattering processes. The temperature and magnetic field dependences of…
Progress in magnetoelectric materials is hindered by apparently contradictory requirements for time-reversal symmetry broken and polar ferroelectric electronic structure in common ferromagnets and antiferromagnets. Alternative routes could…
Mn$_{3-x}$Ga (x = 0.1, 0.4, 0.7) thin films on MgO and SrTiO$_3$ substrates were investigated with magnetic anisotropy perpendicular to the film plane. An anomalous Hall-effect was observed for the tetragonal distorted lattice in the…
Analogous to Peierls' arguments for the `anomalous' Hall in metals I demonstrate that the Hall anomaly in the mixed state of superconductors, the sign change of the Hall resistivity, is a property of a vortex many-body correlation, and show…
The appearance of a Hall conductance necessarily requires breaking of time-reversal symmetry, either by an external magnetic field or by the internal magnetization of a material. However, as a second response, Hall dissipationless…
We study quantum Hall effect within the framework of a newly proposed approach, which captures the principal results of some proposals. This can be established by considering a system of particles living on the non-commutative plane in the…
Measurements of the Hall conductivity in MnSi can provide incisive tests of theories of the anomalous Hall (AH) effect, because both the mean-free-path and magnetoresistance (MR) are unusually large for a ferromagnet. The large MR provides…
We fabricate van der Waals heterostructure devices using few unit cell thick Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ for magnetotransport measurements. The superconducting transition temperature and carrier density in atomically thin samples can…
We compare the effects of temperature, disorder and parallel magnetic field on the metallic-like temperature dependence of the resistivity. We found a similarity between the effects of disorder and parallel field: the parallel field weakens…
We present a model to probe metamagnetic properties in systems with an arbitrary number of interacting spins. Thermodynamic properties such as the magnetization per particle $m(B,T,N)$, linear susceptibility $\chi_1(T)$, nonlinear…
The spin Hall effect and its inverse play key roles in spintronic devices since they allow conversion of charge currents to and from spin currents. The conversion efficiency strongly depends on material details, such as the electronic band…
We discuss the temperature dependence of the Hall conductivity $\sigma_{xy}$ in the magnetic-field-induced spin-density-wave (FISDW) state of the quasi-one-dimensional Bechgaard salts (TMTSF)_2X. Electronic thermal excitations across the…
Detailed analyses are made on previously published data for multi-walled carbon nanotubes. The field dependence of the Hall voltage, the temperature dependence of the Hall coefficient, and the magnetoresistance effect (Phys. Rev. Lett. 72,…