Related papers: Electrically controlled spin-transistor operation …
We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin…
The theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the current flowing from the source (spin injector) to the…
A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin…
We calculate spin transport in two-dimensional waveguides in the presence of spatially modulated Zeeman-split energy bands. We show that in a regime where the spin evolution is predominantly adiabatic the spin backscattering rate can be…
A device enabling mechanically-controlled spin and electric transport in mesoscopic structures is proposed. It is based on the transfer of electrons through weak links formed by suspended nanowires, on which the charge carriers experience a…
Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…
The spin-dependent electron transport has been studied in magnetic semiconductor waveguides (nanowires) in the helical magnetic field. We have shown that -- apart from the known conductance dip located at the magnetic field equal to the…
We propose and investigate a spin transistor device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge…
We demonstrate theoretically all-electric control of the superconducting transition temperature using a device comprised of a conventional superconductor, a ferromagnetic insulator, and semiconducting layers with intrinsic spin-orbit…
Flexible control of magnetization switching by electrical manners is crucial for applications of spin-orbitronics. Besides of a switching current that is parallel to an applied field, a bias current that is normal to the switching current…
We propose and analyze a four-terminal metal-semiconductor device that uses hot-electron transport through thin ferromagnetic films to inject and detect a charge-coupled spin current transported through the conduction band of an arbitrary…
A spin-qubit transformation protocol is proposed for an electron in a mesoscopic quantum ring with tunable Rashba interaction controlled by the external electric field. The dynamics of an electron driven around the ring by a series of…
Spin transistors (whose on-off operation is achieved by electric-field-controlled spin orientation 1), if realized, can revolutionize modern electronics through the implementation of a faster and a more energy-efficient performance as well…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
The conductance modulations in spin field-effect transistors under finite bias voltages were studied. It was shown that when a finite bias voltage is applied between two terminals of a spin field-effect transistor, the spin precession…
Material systems that exhibit tunable spin-selective conductivity are key components of spintronic technologies. Here we demonstrate a novel type of spin-selective transport, based on the unusual Landau level (LL) sequence observed in…
We study the thermoelectric response of a device containing a pair of helical edge states contacted at the same temperature $T$ and chemical potential $\mu$ and connected to an external reservoir, with different chemical potential and…
The edge states of a quantum spin Hall insulator exhibit helical properties, which has generated significant interest in the field of spintronics. Although it is predicted theoretically that Rashba spin-orbit coupling can effectively…
We propose a spin field-effect transistor based on spin-orbit (s-o) coupling of both the Rashba and the Dresselhaus types. Differently from earlier proposals, spin transport through our device is tolerant against spin-independent scattering…
A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a…