Related papers: Enhanced Light Extraction in Tunnel Junction Enabl…
We report on the illustration of the first electron blocking layer (EBL) free AlInN nanowire light-emitting diodes (LEDs) operating in the deep ultraviolet (DUV) wavelength region (sub-250 nm). We have systematically analyzed the results…
Lanthanide-based upconversion nanoparticles (UCNPs) generally require high power laser excitation. Here we report wide-field upconversion microscopy at single-nanoparticle sensitivity using incoherent excitation of a 970-nm light-emitting…
We demonstrate enhanced light extraction for monochrome top-emitting organic light-emitting diodes (OLEDs). The enhancement by a factor of 1.2 compared to a reference sample is caused by the use of a hole transport layer (HTL) material…
Light-emitting diodes based on perovskite nanocrystals (PNCs-LEDs) have gained great interest for next-generation display and lighting technologies prized for their color purity, high brightness and luminous efficiency approaching the…
A two-dimensional (2D) ZnS photonic crystal was deposited on the surface of a one-dimensional (1D) III-nitride micro cavity light-emitting diode (LED), to intermix the light extraction features of both structures (1D+2D). The deposition of…
Ultraviolet-C light-emitting diodes (UVC-LEDs) have great application in pathogen inactivation under various kinds of situations, especially in the fight against the COVID-19. Unfortunately, its epitaxial wafers are so far limited to 2-inch…
Large reflection losses at interfaces in light emitting semiconductor devices cause a significant reduction in their light emission and energy efficiencies. Metal nanoparticle (NP) surface coatings have been demonstrated to increase the…
The use of a thin mixed layer consisting of an inert diluent material and a light emitting material between the hole-transport layer and electron-transport layer of organic light-emitting diodes leads to an increase in the external quantum…
This paper summarises progress made towards the radiation hardening of LED emergency luminaires for evacuation and emergency response within the underground areas of the CERN accelerator complex. The objective has been to radiation harden…
This paper presents an investigation of organic LED extraction efficiency enhancement using a low refractive index scattering layer. A scattering model is developed based on rigorous electromagnetic modelling techniques. The model accounts…
Deep-UV ~ 250 nm (4.96 eV) tilted in-situ co-illumination of the sample under imaging by scanning electron microscope (SEM) is developed at a robust and practical instrument level. Precise mechanical control of the lateral position and tilt…
A plethora of studies ranging from precision physics to quantum information employ ions, highly excited neutral atoms or polar molecules as tools. Motivated by the need for miniaturization, scalability and controllability, the particles are…
Visibly transparent luminescent solar concentrators (TLSCs) can optimize both power production and visible transparency by selectively harvesting the invisible portion of the solar spectrum. Since the primary applications of TLSCs include…
Localized surface plasmons (LSPs) have played a significant role in improving the light emission efficiency of light emitting diodes (LEDs). In this report, polygonal nanoholes have been fabricated in the p-GaN layer of InGaN-based LEDs by…
Carbon nanostructures technology has recently emerged as a key enabler for next-generation optoelectronic devices including deep UV detectors and light sources which is promising in health and environment monitoring. Here, we report the…
Lighting and display, relying on electric and optical down-conversion emission with sluggish power efficiency, account for >15% global electricity consumption1,2. In 2014, quantum-dot (QD) LEDs (QLEDs) with near-optimal external quantum…
InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer…
Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer…
Electrical excitation of light using inelastic electron tunneling is a promising approach for the realization of ultra-compact on-chip optical sources with high modulation bandwidth. However, the practical implementation of these nanoscale…
Vacuum ultraviolet (VUV) light at 118 nm has been shown to be a powerful tool to ionize molecules for various gas-phase chemical studies. A convenient table top source of 118 nm light can be produced by frequency tripling 355 nm light from…