Related papers: Enhanced Light Extraction in Tunnel Junction Enabl…
III-Nitride light emitting diodes (LEDs) are the backbone of ubiquitous lighting and display applications. Imparting directional emission is an essential requirement for many LED implementations. Although optical packaging, nano-patterning…
We use crystalline silicon (Si) antennas to efficiently extract broadband single-photon fluorescence from shallow nitrogen-vacancy (NV) centers in diamond into free space. Our design features relatively easy-to-pattern high-index Si…
The design and fabrication of a metal-dielectric-metal absorber that achieves strong absorption from the ultraviolet (UV) to the near-infrared (near-IR) spectrum are presented. The proposed nanostructure consists of a periodic titanium (Ti)…
The recent discovery of semiconducting two-dimensional materials has led to the prediction of a revolution in the field of optoelectronics, driven by the introduction of a series of new components that are just a few atoms thick. Key…
To improve the power efficiency of light emitting diodes (OLEDs), we developed a novel OLED structure, termed Dielectric-Nanomesh OLED (DNM-OLED), fabricated by large-area nanoimprint lithography (NIL). A dielectric-nanomesh substrate with…
Transitioning to solid-state ultraviolet (UV) lighting is critical for reducing global energy utilization to meet net-zero targets. AlGaN-based far-UVC LEDs offer a mercury-free, energy-efficient alternative to conventional mercury lamps,…
Integrated coherent sources of ultra-violet (UV) light are essential for a wide range of applications, from ion-based quantum computing and optical clocks to gas sensing and microscopy. Conventional approaches that rely on UV gain materials…
Inelastic electron tunneling provides a low-energy pathway for the excitation of surface plasmons and light emission. We theoretically investigate tunnel junctions based on metals and graphene. We show that graphene is potentially a highly…
At present, ultraviolet sensors are utilized in numerous fields ranging from various spectroscopy applications via biotechnical innovations to industrial process control. Despite of this, the performance of current UV sensors is…
We propose the use of superconducting nanowires as both target and sensor for direct detection of sub-GeV dark matter. With excellent sensitivity to small energy deposits on electrons, and demonstrated low dark counts, such devices could be…
We calculate the maximal absorption enhancement obtainable by guided mode excitation in a weakly absorbing dielectric slab over wide wavelength ranges. The slab mimics thin film silicon solar cells in the low absorption regime. We consider…
Efficient conversion of photons to electrical energy has a wide variety of applications including imaging, energy harvesting, and infrared detection. The coupling of electromagnetic radiation to free electron oscillations at a metal…
A method to treat the surface of Nb is described which potentially can improve the performance of superconducting RF cavities. We present tunneling and x-ray photoemission spectroscopy (XPS) measurements at the surface of cavity-grade…
Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centres in wider quantum systems. Here we report increased…
We report on unique features of ultra-thin GaN/AlN quantum wells and demonstrate a new field emission device for human-safe disinfection with an external quantum efficiency of 18% and superior reliability, as compared to far-UVC LEDs. We…
Ultraviolet and visible radiation is observed from the contacts of a scanning tunneling microscope with Si(100) and (111) wafers. This luminescence relies on the presence of hot electrons in silicon, which are supplied, at positive bias on…
In a thermophotonic device used in an energy-harvesting configuration, a hot light-emitting diode (LED) is coupled to a photovoltaic (PV) cell by means of electroluminescent radiation in order to produce electrical power. Using…
The lattice mismatch between AlGaN and AlN substrates limits the design and efficiency of UV LEDs, but it can be mitigated by the co-incorporation of boron. We employ hybrid density functional theory to investigate the thermodynamic,…
We fabricated polygonal nanoholes in the top p-GaN layer of the InGaN/GaN light-emitting diode, followed by the deposition of Au/Al metal thin film within the nanoholes to create metal microcavities, thereby constructing the surface plasmon…
We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (specific resistivity 1.3 X 10-3 {\Omega}-cm2) for various…