Carbon nanostructures technology has recently emerged as a key enabler for next-generation optoelectronic devices including deep UV detectors and light sources which is promising in health and environment monitoring. Here, we report the fabrication of solution processed Carbon nano-dots (CNDs)/n-Si heterojunction showing broadband spectral response with a peak responsivity of ~ 1.25 A/W in UV (~300 nm) wavelength. The surface topography and chemical information of synthesized CNDs via a facile synthesis route have been characterized showing the presence of surface chemical states resulting broad optical emission. The CNDs/n-Si photo diodes exhibit very low dark current (~500 pA), excellent rectification ratio (~5*10^3), and very good photo-modulation in UV region. Given the solution-processing capability of the devices and extraordinary optical properties of CNDs, the use of CNDs will open up unique opportunities for future high-performance, low-cost DUV photo detectors.
@article{arxiv.1807.10825,
title = {Solution Processed CMOS compatible Carbon Nano-dots Based Heterojunction for Enhanced UV Detector},
author = {Rishi Maiti and Subhrajit Mukherjee and Tamal Dey and Samit K Ray},
journal= {arXiv preprint arXiv:1807.10825},
year = {2018}
}