Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and non-radiative recombination centers. Here, we first developed self-catalyzed p-type GaAs nanowires (NWs) with pure zinc blende (ZB) structure, and then fabricated photodetector made by these NWs. Due to absence of stacking faults and suppression of large amount of defects with deep energy levels, the photodetector exhibits room-temperature high photo responsivity of 1.45 x 105 A W^-1 and excellent specific detectivity (D*) up to 1.48 x 10^14 Jones for low-intensity light signal of wavelength 632.8 nm, which outperforms previously reported NW-based photodetectors. These results demonstrate that these self-catalyzed pure-ZB GaAs NWs to be promising candidates for optoelectronics applications.
@article{arxiv.1804.07421,
title = {High-Responsivity Photodetection by Self-Catalyzed Phase-Pure P-GaAs Nanowire},
author = {Hassan Ali and Yunyan Zhang and Jing Tang and Kai Peng and Sibai Sun and Yue Sun and Feilong Song and Attia Falak and Shiyao Wu and Chenjiang Qian and Meng Wang and Zhanchun Zuo and Kui-Juan Jin and Ana M. Sanchez and Huiyun Liu and Xiulai Xu},
journal= {arXiv preprint arXiv:1804.07421},
year = {2018}
}