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Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o…
Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy (PMA). Atom probe tomography (APT), scanning transmission electron microscopy…
This work presents a comprehensive analysis of the variability and reliability of the resistive switching (RS) behavior in Prussian Blue (a mixed-valence iron(III/II) hexacyanoferrate compound) thin films, used as the active layer. These…
Vortex flow in driven type II superconductors shows strong memory and history dependent effects. Here, we study a schematic microscopic model of driven vortices to propose a scenario for a broad set of these kind of phenomena ranging from…
Memristive devices have been considered promising candidates for nature-inspired computing and in-memory information processing. However, experimental devices developed to date typically show significant variability and function at…
Redox-based nanoionic resistive memory cells (ReRAMs) are one of the most promising emerging nano-devices for future information technology with applications for memory, logic and neuromorphic computing. Recently, the serendipitous…
Memristors as emergent nano-electronic devices have been successfully fabricated and used in non-conventional and neuromorphic computing systems in the last years. Several behavioral or physical based models have been developed to explain…
Vanadium dioxide (VO2) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO2 memory devices have essentially been volatile at room…
As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…
Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the N\'eel along different orientations. Variations of the…
We propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon for their possible application as…
Energy costs of information processing are growing exponentially. Bit erasure is a key problem in this energy-information nexus, and a number of seminal relationships have been deduced regarding the relationship between thermodynamic costs…
Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends…
Neuromorphic architectures offer great promise for achieving computation capacities beyond conventional Von Neumann machines. The essential elements for achieving this vision are highly scalable synaptic mimics that do not undermine…
Typical mammal brains have some form of random connectivity between neurons. Reservoir computing, a neural network approach, uses random weights within its processing layer along with built-in recurrent connections and short-term, fading…
Highly accurate and predictive models of resistive switching devices are needed to enable future memory and logic design. Widely used is the memristive modeling approach considering resistive switches as dynamical systems. Here we introduce…
Memristors are receiving keen interest because of their potential varied applications and promising large-scale information storage capabilities. Tantalum oxide is a memristive material that has shown promise for high-performance…
Using a thermodynamically consistent, mesoscopic model for modern complementary metal-oxide-semiconductor transistors, we study an array of logical circuits and explore how their function is constrained by recent thermodynamic uncertainty…
Robust multi-level spin memory with the ability to write information electrically is a long-sought capability in spintronics, with great promise for applications. Here we achieve nonvolatile and highly energy-efficient magnetization…
We propose a novel topological photonic memory that encodes information through dynamically controllable Chern numbers in a two-band topological photonic system. Utilizing a honeycomb lattice photonic crystal, the memory leverages…