Related papers: Endurance Write Speed Tradeoffs in Nonvolatile Mem…
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing…
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…
We propose a data-driven approach to modeling the spatio-temporal characteristics of NAND flash memory read voltages using conditional generative networks. The learned model reconstructs read voltages from an individual memory cell based on…
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a…
In 1971 the memristor was originally postulated as a new non-linear circuit element relating the time integrals of current and voltage. More recently researchers at HPLabs have linked the theoretical memristor concept to resistance…
We present a design-technology tradeoff analysis in implementing machine-learning inference on the processing cores of a Non-Volatile Memory (NVM)-based many-core neuromorphic hardware. Through detailed circuit-level simulations for scaled…
Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…
As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…
In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that…
Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…
Neuromorphic computing circuits can be realized using memristors based on low-dimensional materials enabling enhanced metal diffusion for resistive switching. Here, we investigate memristive properties of vertically aligned MoS$_2$…
Current portable memory device relies heavily on flash memory technology for its implementation. New generation of non-volatile memory is likely to replace floating gates, charge-trapping memory currently still suffering from inadequate…
We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical…
The necessity of having an electronic device working in relevant biological time scales with a small footprint boosted the research of a new class of emerging memories. Ag-based volatile resistive switching memories (RRAMs) feature a…
A powerful time series analysis modeling technique is presented to describe cycle-to-cycle variability in memristors. These devices show variability linked to the inherent stochasticity of device operation and it needs to be accurately…
We propose an optical memory cell based on ultrafast wavelength switching in coupled-cavity microlasers, featuring bistability between modes separated by several nanometers. A numerical implementation is demonstrated by simulating a…
In this paper, we report the effect of write voltage and frequency on memristor based Resistive Random Access Memory (RRAM). The above said parameters have been investigated on the linear drift model of memristor. With a variation of write…
More-versatile memory is strongly desired for end-users to protect their information in the information era. In particular, bit-level switchable memory, from rewritable to read-only function, allows end-users to prevent any important data…