More-versatile memory is strongly desired for end-users to protect their information in the information era. In particular, bit-level switchable memory, from rewritable to read-only function, allows end-users to prevent any important data from being tampered with. However, no such switchable memory has been reported. We demonstrated the rewritable function can be converted into a read-only function by a sufficiently large current pulse in a U-shaped domain-wall memory composed of an asymmetric Pt/Co/Ru/AlOx heterostructure with strong Dzyaloshinskii-Moriya interaction. Wafer-scale switchable magnetic domain-wall memory arrays on 4-inch Si/SiO2 substrate were designed and fabricated. Furthermore, we confirmed the information can be stored in rewritable or read-only state at bit-level according to the security-needs of end-users. Our work not only provides a solution for personal confidential data, but also paves the way for developing multi-functional spintronic devices.
@article{arxiv.2207.14427,
title = {Electrically function switchable magnetic domain-wall memory},
author = {Yu Sheng and Weiyang Wang and Yongcheng Deng and Yang Ji and Houzhi Zheng and Kaiyou Wang},
journal= {arXiv preprint arXiv:2207.14427},
year = {2022}
}