Related papers: Electrically function switchable magnetic domain-w…
An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1 to 5 nm in thickness, 20 to 250 nm…
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…
We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the…
Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…
Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain…
Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of…
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…
We demonstrate the feasibility of multilevel recording in Pt/Bi(1-d)FeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi(1-d)FeO3 interface. A tunable population of up and down ferroelectric…
Rotating the magnetization of a magnetostrictive nanomagnet with electrically generated mechanical strain dissipates miniscule amount of energy compared to any other rotation method and would have been the ideal method to write bits in…
A single magnetic atom on a surface epitomizes the scaling limit for magnetic information storage. Indeed, recent work has shown that individual atomic spins can exhibit magnetic remanence and be read out with spin-based methods,…
A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…
Complementary metal oxide semiconductor (CMOS) devices display volatile characteristics, and are not well suited for analog applications such as neuromorphic computing. Spintronic devices, on the other hand, exhibit both non-volatile and…
Magnetic domain walls are information tokens in both logic and memory devices, and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
We propose a design for the magnetic memory cell which allows an efficient storage, recording, and readout of information on the basis of thin film ferromagnetic nanorings. The information bit is represented by the polarity of a stable…
As computing power demands continue to grow, superconducting electronics present an opportunity to reduce power consumption by increasing the energy efficiency of digital logic and memory. A key milestone for scaling this technology is the…
Single-molecule memory device based on a single-molecule magnet (SMM) is one of the ultimate goals of semiconductor nanofabrication technologies. Here, we study how to manipulate and readout the SMM's two spin-state of stored information…
Domain wall memories have undergone several changes over the years for faster shift, read, and write operations; however, fundamental issues persist due to creating pinning sites topographically along the nanowire. The deformity in notches…
Unidirectional motion of magnetic domain walls is the key concept underlying next-generation domain-wall-mediated memory and logic devices. Such motion has been achieved either by injecting large electric currents into nanowires or by…
Memristors, which are characterized by their unique input-voltage-history-dependent resistance, have garnered significant attention for the exploration of next-generation in-memory computing, reconfigurable logic circuits, and neural…