Related papers: Electrically function switchable magnetic domain-w…
We generalize domain-wall dynamics to the case of translationally noninvariant ferromagnetic nanowires. The obtained equations of motion make the description of the domain-wall propagation more realistic by accounting for the variations…
Spintronic devices, such as the domain walls and skyrmions, have shown significant potential for applications in energy-efficient data storage and beyond CMOS computing architectures. In recent years, spiking neural networks have shown more…
Compared to quantum logic gates, quantum memory has received far less attention. Here, we explore the prognosis for a solid-state, scalable quantum dynamic random access memory (Q-DRAM), where the qubits are encoded by the spin orientations…
Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…
The authors show that the magnetization of a magnetostrictive/piezoelectric multiferroic single-domain shape-anisotropic nanomagnet can be switched with very small voltages that generate strain in the magnetostrictive layer. This can be the…
We propose a new mechanism and a related device concept for a robust, magnetic field tunable radio-frequency (rf) oscillator using the self oscillation of a magnetic domain wall subject to a uniform static magnetic field and a spatially…
The magnetic field (or electric current) driven domain-wall motion in magnetic nanostripes is of considerable interest because it is essential to the performance of information storage and logic devices. One of the currently key problems is…
Utilization of the spatial degree of freedom vastly enhances informational capacity of light at the cost of stringent requirements on the processing devices. Multi-mode quantum memories constitute a viable candidate for quantum and…
We describe an equivalent circuit model applicable to a wide variety of magnetoelectric phenomena and use SPICE simulations to benchmark this model against experimental data. We use this model to suggest a different mode of operation where…
The demand for data protection measures against unauthorized changes or deletions is steadily increasing. These measures are essential for maintaining the integrity and accessibility of data, effectively guarding against threats like…
The commercialization of non-volatile memories based on ferroelectric transistors (FeFETs) has remained elusive due to scaling, retention, and endurance issues. Thus, it is important to develop accurate characterization tools to quantify…
Spintronic artificial spiking neurons are promising due to their ability to closely mimic the leaky integrate-and-fire (LIF) dynamics of the biological LIF spiking neuron. However, the neuron needs to be reset after firing. Few of the…
Magnetic skyrmion, a swirling spin texture, in chiral magnets is characterized by (i) nano-scale size ($\sim$1nm -- 100nm), (ii) topological stability, and (iii) gyro-dynamics. These features are shown to be advantageous for (a)…
We study current-induced dynamics of spin textures in thin magnetic nanowires. We derive effective equations of motion describing the dynamics of the domain-wall soft modes associated with topological defects. Because the magnetic domain…
Spintronic devices based on domain wall (DW) motion through ferromagnetic nanowire tracks have received great interest as components of neuromorphic information processing systems. Previous proposals for spintronic artificial neurons…
Depinning of nanoscale magnetic textures, such as domain walls, vortices and skyrmions, is of paramount importance for magnetic storage and information processing. We measure time-resolved magnetic switching statistics of an individual,…
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…
Two-dimensional (2D) van der Waals (vdW) multiferroics offer an attractive platform for four-state nonvolatile memory by combining switchable ferroelectric polarization and magnetization within a single material system. However, their…
With the rise in in-memory computing architectures to reduce the compute-memory bottleneck, a new bottleneck is present between analog and digital conversion. Analog content-addressable memories (ACAM) are being recently studied for…
Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase Change Materials (PCMs) have been showed…