Related papers: Single Crystal Functional Oxides on Silicon
The ability to controllably manipulate the complex topological polar configurations, such as polar flux-closure via external stimuli, enables many applications in electromechanical devices and nanoelectronics including high-density…
Our recent year's studies of the prototypal FeSe and molecule-intercalated (Li,Fe)OHFeSe superconductor systems are briefly reviewed here, with emphasis on experimental observations of the link between the superconductivity and normal-state…
The influence of solubilizing substitutional groups on the electronic and optical properties of functionalized pentacene molecules and crystals have been investigated. Density functional theory is used to calculate the electronic and…
In order to combine silicon technology with the functionality of magnetic systems, a number of ferromagnetic (FM) materials have been suggested for the fabrication of metal/semiconductor heterojunctions. In this work, we present a…
For applying tensile or compressive uniaxial strain to functional thin films, we propose a novel approach in combining a piezoelectric-based device and a technical metallic substrate used widely in the 2nd generation coated conductors (i.e.…
Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize…
We study the optical and electrical properties of silver films with a graded thickness obtained through metallic evaporation in vacuum on a tilted substrate to evaluate their use as semitransparent electrical contacts. We measure their…
We report on the observation of high-temperature ($T_\textrm{c}$) superconductivity and magnetic vortices in single-unit-cell FeSe films on anatase TiO$_2$(001) substrate by using scanning tunneling microscopy. A systematic study and…
Structured, periodic optical materials can be used to form photonic crystals capable of dispersing, routing, and trapping light. A similar phenomena in periodic elastic structures can be used to manipulate mechanical vibrations. Here we…
Recent advancements underscore the critical need to develop ferroelectric materials compatible with silicon. We systematically explore possible ferroelectric silicon quantum films and discover a low-energy variant (hex-OR-2*2-P) with energy…
The record of superconducting transition temperature(Tc) has long been 56K for the iron-based high temperature superconductors(Fe-HTS's). Recently, in single layer FeSe films grown on SrTiO3 substrate, signs for a new 65K Tc record are…
We propose a minimal tight-binding model for thin films made of topological crystalline insulator (TCI) on the basis of the mirror and discrete rotational symmetries. The basic term consists of the spin-orbit interaction describing a Weyl…
Silicon oxide (SiOx) has been widely used in many electronic systems as a supportive and insulating medium. Here we demonstrate various electrical phenomena such as negative differential resistance, resistive switching and current…
We have studied the dark conductivity of a broad microstructural range of plasma deposited single phase undoped microcrystalline silicon films in a wide temperature range (15 - 450K) to identify the possible transport mechanisms and the…
Herein, we report CeIrIn5 thin-film growth on a MgF2 (001) substrate using pulsed laser deposition technique. X-ray diffraction analysis showed that the thin films were either mainly a-axis-oriented (TF1) or a combination of a- and…
We report a comprehensive study of magneto-transport properties in MoSi$_2$ bulk and thin films. Textured MoSi$_2$ thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000%…
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…
Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain engineering via lattice mismatch to control ferroelectricity in thin-film heterostructures. This approach, however, lacks the ability to…
The temperature dependence of dark conductivity at low temperatures (300-15 K) was studied on a wide microstructural range of well-characterized highly crystallized single phase undoped microcrystalline silicon samples. Our study reveals…
If metal surfaces are exposed to sufficiently oxygen-rich environments, oxides start to form. Important steps in this process are the dissociative adsorption of oxygen at the surface, the incorporation of O atoms into the surface, the…