Related papers: Optically controlled spin-polarization memory effe…
We demonstrate dynamical nuclear spin polarization in the absence of an external magnetic field, by resonant circularly polarized optical excitation of a single electron or hole charged quantum dot. Optical pumping of the electron spin…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
Hybrid ionic-electronic conductors have the potential to generate memory effects and neuronal behavior. The functionality of these mixed materials depends on ion motion through thin polarizable channels. Here, we explore different…
We investigate the structure, chemical bonding, electronic properties, and magnetic behavior of a three-dimensional graphitic network in aba and aaa stacking with intercalated transition metal atoms (Mn, Fe, Co, Ni, and Cu). Using density…
We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…
The ultrathin nature of two-dimensional monolayer semiconductors yields optoelectronic properties which are highly responsive to changes in free-carrier density, making it imperative to masterfully control their doping levels. We report a…
We analyze, through resonant photoluminescence, the spin dynamics of an individual magnetic atom (Mn) coupled to a hole in a semiconductor quantum dot. The hybrid Mn-hole spin and the positively charged exciton in a CdTe/ZnTe quantum dot…
We have studied hyperfine interactions between spin-polarized electrons and lattice nuclei in Al_0.1Ga_0.9As/GaAs quantum well (QW) heterostructures. The spin-polarized electrons are electrically injected into the semiconductor…
The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and…
The optical injection of charge and spin currents are investigated in Ge$_{1-x}$Sn$_{x}$ semiconductors as a function of Sn content. These emerging silicon-compatible materials enable the modulation of these processes across the entire…
The non-thermal optical control of magnetic order offers a promising route to ultrafast, energy-efficient information technologies. Although optical manipulation of magnetism in metals has been extensively studied, experimentally…
Experimental studies of spin transport in a two-dimensional electron gas hosted by a triple GaAs/AlGaAs quantum well are reported. Using time-resolved Kerr rotation, we observed the precession of the spin polarization about a…
In systems with spin-momentum locking, such as the surface states of three-dimensional topological insulators, a charge current is spin-polarized and spin-flip interactions between electron and nuclear spins can transfer this polarization…
We report a giant electric field induced increase of spin orientation of excitons in n-type GaAs/AlGaAs quantum well. It correlates strongly with the formation of negatively charged excitons (trions) in the photoluminescence spectra. Under…
In the majority of optomechanical experiments, the interaction between light and mechanical motion is mediated by radiation pressure, which arises from momentum transfer of reflecting photons. This is an inherently weak interaction, and…
External driving of spinor degrees of freedom by magnetic or optical fields in quantum systems underpin many applications ranging from nuclear magnetic resonance to coherent state control in quantum computing. Although spinor polariton…
Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties…
p-type doping of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the…
Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay…
The carrier spin dynamics in a n-doped (In,Ga)As/GaAs quantum well has been studied by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 milliKelvin. These techniques give data with very…