p-type doping of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-dependent Hall effect). In spite of the weak localization of the carriers at low temperature, the holes clearly induce a ferromagnetic interaction between the localized spins, which is discussed as a function of Mn content and hole concentration.
@article{arxiv.cond-mat/9910131,
title = {Carrier induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers},
author = {D. Ferrand and J. Cibert and C. Bourgognon and S. Tatarenko and A. Wasiela and G. Fishman and A. Bonanni and H. Sitter and S. Kolesnik and J. Jaroszynski and A. Barcz and T. Dietl},
journal= {arXiv preprint arXiv:cond-mat/9910131},
year = {2015}
}
Comments
3 figures Ninth International Conference on II-VI Compounds, Kyoto, Japan, november 1999