Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C

Y. D. Park; J. D. Lim; K. S. Suh; S. B. Shim; J. S. Lee; C. R. Abernathy; S. J. Pearton; Y. S. Kim; Z. G. Khim; R. G. Wilson

doi:10.1103/PhysRevB.68.085210

Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C

Materials Science 2007-05-23 v1

Authors: Y. D. Park , J. D. Lim , K. S. Suh , S. B. Shim , J. S. Lee , C. R. Abernathy , S. J. Pearton , Y. S. Kim , Z. G. Khim , R. G. Wilson

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Abstract

Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as well as the extraordinary Hall Effect up to the observed magnetic ordering temperature (T_C). Mn ion-implanted p+GaAs:C with as-grown carrier concentrations > 10^20 cm^-3 show remanent magnetization up to 280 K.

Keywords

carrier-mediated ferromagnetism Mn ion implantation p+GaAs:C magnetic ordering extraordinary Hall effect

Cite

@article{arxiv.cond-mat/0308200,
  title  = {Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C},
  author = {Y. D. Park and J. D. Lim and K. S. Suh and S. B. Shim and J. S. Lee and C. R. Abernathy and S. J. Pearton and Y. S. Kim and Z. G. Khim and R. G. Wilson},
  journal= {arXiv preprint arXiv:cond-mat/0308200},
  year   = {2007}
}

Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C

Abstract

Keywords

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