Although InP and GaAs have very similar band-structure their magnetic properties appear to drastically differ. Critical temperatures in (In,Mn)P are much smaller than that of (Ga,Mn)As and scale linearly with Mn concentration. This is in contrast to the square root behaviour found in (Ga,Mn)As. Moreover the magnetization curve exhibits an unconventional shape in (In,Mn)P contrasting with the conventional one of well annealed (Ga,Mn)As. By combining several theoretical approaches, the nature of ferromagnetism in Mn doped InP is investigated. It appears that the magnetic properties are essentially controlled by the position of the Mn acceptor level. Our calculations are in excellent agreement with recent measurements for both critical temperatures and magnetizations. The results are only consistent with a Fermi level lying in an impurity band, ruling out the possibility to understand the physical properties of Mn doped InP within the valence band scenario. The quantitative success found here reveals a predictive tool of choice that should open interesting pathways to address magnetic properties in other compounds
@article{arxiv.1609.04227,
title = {Carrier induced ferromagnetism in the insulating Mn doped III-V semiconductor InP},
author = {Richard Bouzerar and Denis Machon and Patrice Melinon and Daniel May and Ute Löw and Shengqiang Zhou and Georges Bouzerar},
journal= {arXiv preprint arXiv:1609.04227},
year = {2016}
}
Comments
5 pages and 5 figures, accepted for publication in Phys. Rev. B