Related papers: Optically controlled spin-polarization memory effe…
We report on the magneto-gyrotropic photogalvanic effect (MPGE) in n-doped (110)-grown GaAs/AlGaAs quantum-well (QW) structures caused by free-carrier absorption of terahertz radiation in the presence of a magnetic field. The photocurrent…
We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special attention is paid to the relevance of alloy induced carrier…
We demonstrate all optical electron spin initialization, storage and readout in a single self-assembled InGaAs quantum dot. Using a single dot charge storage device we monitor the relaxation of a single electron over long timescales…
In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied…
Incorporation of manganese impurities into II-VI semiconductors results in a dramatic change in their properties due to strong exchange interactions between the Mn ion and the semiconductor host. In colloidal quantum dots (QDs), these…
Excitons in diluted magnetic semiconductors represent excellent probes for studying the magnetic properties of these materials. Various magneto-optical effects, which depend sensitively on the exchange interaction of the excitons with the…
A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected…
Current-induced electron spin polarization is shown to produce nuclear hyperpolarization through dynamic nuclear polarization. Saturated fields of several millitesla are generated upon the application of electric field over a timescale of a…
Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly…
We use time-resolved Kerr rotation to demonstrate the optical and electronic tuning of both the electronic and local moment (Mn) spin dynamics in electrically gated parabolic quantum wells derived from II-VI diluted magnetic semiconductors.…
Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in GaMnAs films, known to be hole-mediated, can be modified by He ion irradiation. The…
The spin-orbit interaction enables interconversion between a charge current and a spin current. It is usually believed that in a nonmagnetic metal (NM) or at a NM/ferromagnetic metal (FM) bilayer interface, the symmetry of spin-orbit…
The nature of the correlated electron gas and its response to photo-injected electron-hole pairs in nominally undoped and modulation-doped multiple quantum-well (MQW) structures was studied by experiment and theory, revealing a new type of…
The control of intrinsic magnetic degrees of freedom is very important as it offers a practical means to manipulate and probe electron spin transport. Tunable spin-orbit effect in quantum wires can in principle serve as a means to achieve…
We report magnetization measurements and magnetic resonance data for SrTiO3 doped by manganese. We show that the recently reported coexistent spin and dipole glass (multiglass) behaviours are strongly affected by the distribution of Mn ions…
It is well-known that the Curie temperature, and hence the magnetization, in diluted magnetic semiconductor (DMS) like Ga$_{1-x}$Mn$_x$As can be controlled by changing the equilibrium density of holes in the material. Here, we propose that…
Optical pump-probe techniques are used to generate and measure electron spin polarization in a gallium arsenide epilayer in which the electron spin coherence time exceeds the mode-locked laser repetition period. Resonant spin amplification…
We have shown that electron spin density can be generated by a dc current flowing across a $pn$ junction with an embedded asymmetric quantum well. Spin polarization is created in the quantum well by radiative electron-hole recombination…
Exciton spin and related optical polarization in self-assembled InAs/In$_{0.53}$Ga$_{0.23}$Al$_{0.24}$As/InP(001) quantum dashes emitting at 1.55 {\mu}m are investigated by means of polarization- and time-resolved photoluminescence, as well…
Nuclear quadrupole interaction extends the limits imposed by hyperfine interaction on the spin coherence of the electron and nuclei in a quantum dot. The strain-induced nuclear quadrupole interaction suppresses the nuclear spin flip and…