Related papers: A Nonlinear HP-Type Complementary Resistive Switch
We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal…
Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the…
Resistive random access memory (RRAM) is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to…
Organic electronics is very promising due to the flexibility, modifiability as well as variety of the available organic molecules. Efforts are going on to use organic materials for the realization of memory devices. In this regard resistive…
While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis).…
Microring resonators (MRRs) are a key photonic component in integrated devices, due to their small size, low insertion losses, and passive operation. While the MRRs have been established for optical filtering in wavelength-multiplexed…
An annular magnetic memory that uses a spin-polarized current to switch the magnetization direction or helicity of a magnetic region is proposed. The device has magnetic materials in the shape of a ring (1 to 5 nm in thickness, 20 to 250 nm…
Inverse stochastic resonance (ISR) is a phenomenon where noise reduces rather than increases the firing rate of a neuron, sometimes leading to complete quiescence. ISR was first experimentally verified with cerebellar Purkinje neurons.…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two linear, parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving…
During the study of resistive switching devices, researchers have found that the influence of the insertion layer cannot be ignored. Many reports have confirmed that the appropriate insertion layer can significantly improve the performance…
The Reservoir Computing (RC) paradigm posits that sufficiently complex physical systems can be used to massively simplify pattern recognition tasks and nonlinear signal prediction. This work demonstrates how random topological magnetic…
Electrical switching has been observed in carefully designed metal-insulator-metal devices built at small geometries. These devices are also commonly known as memristors and consist of specific materials such as transition metal oxides,…
This paper deals with the analysis of nonlinear circuits that interconnect passive elements (capacitors, inductors, and resistors) with nonlinear resistors exhibiting a range of $\it{negative}$ resistance. Such active elements are necessary…
Online continual learning, aimed at developing a neural network that continuously learns new data from a single pass over an online data stream, generally suffers from catastrophic forgetting. Existing replay-based methods alleviate…
Memristive devices, whose resistance can be controlled by applying a voltage and further retained, are attractive as possible circuit elements for neuromorphic computing. This new type of devices poses a number of both technological and…
On-chip optical nonreciprocal devices are vital components for integrated photonic systems and scalable quantum information processing. Nonlinear optical isolators and circulators have attracted considerable attention because of their…
In this paper, we introduce a new representation for open-loop reset systems. We show that at steady-state a reset integrator can be modelled as a parallel interconnection of the base-linear system and piece-wise constant nonlinearity. For…
We demonstrate a nonlinear metamaterial in microwave frequency regime with hysteresis effect and bistable states, which can be utilized as a remotely controllable micro second switching device. A varactor loaded split-ring resonator (SRR)…
The present work focuses on experimental investigations of a bistabile silicon-on-insulator (SOI) micro-ring resonator (MRR). The resonator exploits a continuous-wave operation of the carrier-induced bistability demonstrating a stable…