Related papers: A Nonlinear HP-Type Complementary Resistive Switch

We propose a novel concept of hybrid relay-reflecting intelligent surface (HR-RIS), in which a single or few elements are deployed with power amplifiers (PAs) to serve as active relays, while the remaining elements only reflect the incident…

The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's…

The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive…

We describe a new approach for on-chip optical non-reciprocity which makes use of strong optomechanical interaction in microring resonators. By optically pumping the ring resonator in one direction, the optomechanical coupling is only…

In this letter, the properties of split-ring resonators (SRRs) loaded with high-Q capacitors and nonlinear varactors are theoretically analyzed and experimentally measured. We demonstrate that the resonance frequency $f_m$ of the nonlinear…

We suggest a realization of a bistable non-volatile memory capacitor (memcapacitor). Its design utilizes a strained elastic membrane as a plate of a parallel-plate capacitor. The applied stress generates low and high capacitance…

The intrinsically rectifying-resistive switching (IR-RS) has been regarded as an effective way to address the crosstalk issue, due to the Schottky diodes formed at the metal/oxide interfaces in the ON states to suppress the sneak current at…

This work presents the mathematical modeling and numerical investigation of a thermo-controlled Micro-Electro-Mechanical System (MEMS) obtained by coupling an HP memristor with mechanical and electrical resonators. Using the linear drift HP…

Stochastic behaviors of resistive random access memory (RRAM) play an important role in the design of cross-point memory arrays. A Monte Carlo compact model of oxide RRAM is developed and calibrated with experiments on various device stack…

Nonvolatile bipolar resistive switching has been observed in an Au/BiFeO3/Pt structure, where a Schottky contact and a quasi-Ohmic contact were formed at the Au/BiFeO3 and BiFeO3/Pt interface, respectively. By changing the polarity of the…

The powering range of wireless power transfer (WPT) systems is typically confined to areas close to the transmitter. Shape-reconfigurable two-dimensional (2-D) relay resonator arrays have been developed to extend this range, offering…

Variability in memristive devices based on h-BN dielectrics is studied in depth. Different numerical techniques to extract the reset voltage are described and the corresponding cycle-to-cycle variability is characterized by means of the…

Sequential recommender systems (SRSs) aim to predict the subsequent items which may interest users via comprehensively modeling users' complex preference embedded in the sequence of user-item interactions. However, most of existing SRSs…

A Reflective Intelligent Surface (RIS) consists of many small reflective elements whose reflection properties can be adjusted to change the wireless propagation environment. Envisioned implementations require that each RIS element be…

Network-controlled repeaters (NCRs) are a low-cost means to extend coverage and strengthen macro diversity in wireless networks. They operate in real time by amplifying and re-transmitting the incoming signal with only hardware-level…

Memristor device modeling is currently a heavily researched topic and is becoming ever more important as memristor devices make their way into CMOS circuit designs, necessitating accurate and efficient memristor circuit simulations. In this…

A new model of a symmetric two-terminal non-volatile RRAM device based on Perovskite oxide thin film materials, specifically Pr1-xCaxMnO3 (PCMO), is proposed and analyzed. The model consists of two identical half-parts, which are completely…

Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…

Reservoir computing (RC) is a state-of-the-art machine learning method that makes use of the power of dynamical systems (the reservoir) for real-time inference. When using biological complex systems as reservoir substrates, it serves as a…

The physics underlying reset in bipolar resistive memory has been the subject of decades of controversy and has been identified as the primary barrier to resistive memory technology development. This manuscript introduces a nanoscale effect…