Built-in Homojunction Dominated Intrinsically Rectifying-Resistive Switching in NiO Nanodots for Selection Device-Free Memory Application
Abstract
The intrinsically rectifying-resistive switching (IR-RS) has been regarded as an effective way to address the crosstalk issue, due to the Schottky diodes formed at the metal/oxide interfaces in the ON states to suppress the sneak current at reverse biases. In this letter, we report for the first time another type of IR-RS that is related to the built-in homojunction. The IR-RS study was usually limited to macroscopic samples with micron-order pad-type electrodes, while this work is on NiO nanodots fabricated with ultrathin anodic-aluminum-oxide templates and acting as nanoscaled analogs of real devices. The NiO nanodots show high storage density and high uniformity, and the IR-RS behaviors are of good device performances in terms of retention, endurance, switching ratio and rectification ratio. The feasibility of the IR-RS for selection device-free memory application has been demonstrated, by calculating the maximum crossbar array size under the worst-case scenario to be 3 Mbit.
Keywords
Cite
@article{arxiv.1702.05665,
title = {Built-in Homojunction Dominated Intrinsically Rectifying-Resistive Switching in NiO Nanodots for Selection Device-Free Memory Application},
author = {Zhong Sun and Linlin Wei and Ce Feng and Peixian Miao and Meiqi Guo and Huaixin Yang and Jianqi Li and Yonggang Zhao},
journal= {arXiv preprint arXiv:1702.05665},
year = {2017}
}
Comments
Advanced Electronic Materials 2017