Related papers: Three-terminal graphene single-electron transistor…
For a capacitor made of a semiconducting carbon nanotube (CNT) suspended above a metallic gate, Coulomb correlations between individual electrons can lead to a capacitance that is much larger than the geometric capacitance. We argue that…
Coulomb blockade thermometers (CBTs) are versatile and, in principle, primary thermometers operating down to the micro-Kelvin range but bias heating spoils the thermometry and the primary mode. Here, we introduce a method to extract the CBT…
We study single electron transport through a graphene quantum dot with magnetic adsorbates. We focus on the relation between the spin order of the adsorbates and the linear conductance of the device. The electronic structure of the graphene…
We have incorporated an aluminum single electron transistor (SET) directly on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot. Charge…
A quantum dot has been etched in bilayer graphene connected by two small constrictions to the leads. We show that this structure does not behave like a single quantum dot but consists of at least three sites of localized charge in series.…
We study the linear conductance of single electron devices showing Coulomb blockade phenomena. Our approach is based on a formally exact path integral representation describing electron tunneling nonperturbatively. The electromagnetic…
Interactions among charge carriers in graphene can lead to the spontaneous breaking of multiple degeneracies. When increasing the number of graphene layers following rhombohedral stacking, the dominant role of Coulomb interactions becomes…
We present an improved nuclear refrigerator reaching 0.3 mK, aimed at microkelvin nanoelectronic experiments, and use it to investigate metallic Coulomb blockade thermometers (CBTs) with various resistances R. The high-R devices cool to…
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded…
Recent experiments about the low temperature behaviour of a Single Wall Carbon Nanotube (SWCNT) showed typical Coulomb Blockade (CB) peaks in the zero bias conductance and allowed us to investigate the energy levels of interacting…
We conduct experimental studies on the electrical transport properties of monolayer graphene directly covered by a few layers of $\rm CrI_3$. We do not observe the expected magnetic exchange coupling in the graphene but instead discover…
In this article we investigate the excitations in a single graphene layer and in a single-walled carbon nanotube, i.e. the spectrum of magnetic excitations is calculated. In the absence of interactions in these systems there is a unique gap…
We have suspended an Al based single-electron transistor whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island…
Tunnel transport of interacting spin-polarized electrons through a single-level vibrating quantum dot in external magnetic field is studied. By using density matrix method, the current-voltage characteristics and the dependence of…
Generation of high harmonics in a monolayer graphene initiated by strong coherent radiation field, taking into account electron-electron Coulomb interaction is investigated. A microscopic theory describing the nonlinear optical response of…
We report transport data obtained for a double-gated bilayer graphene quantum dot. In Coulomb blockade measurements, the gate dielectric Cytop(TM) is found to provide remarkable electronic stability even at cryogenic temperatures. Moreover,…
We propose an implementation of a singlet-only spin qubit in a GaAs-based triple quantum dot with a (1,4,1) charge occupation. In the central multi-electron dot, the interplay between Coulomb interaction and an out-of-plane magnetic field…
Graphene double quantum open the possibility to use charge or spin degrees of freedom for storing and manipulating quantum information in this new electronic material. However, impurities and edge disorders in etched graphene…
A double quantum dot is formed in a graphene nanoribbon device using three top gates. These gates independently change the number of electrons on each dot and tune the inter-dot coupling. Transport through excited states is observed in the…
More than 3 kV breakdown voltage was demonstrated in monolithic bidirectional GaN HEMTs for the first time having potential applications in 1200V or 1700V-class novel power converters. The on resistance of the fabricated transistors was ~20…