Related papers: Three-terminal graphene single-electron transistor…
We discuss a Kohn-Luttinger-like mechanism for superconductivity in Bernal bilayer graphene and rhombohedral trilayer graphene. Working within the continuum model description, we find that the screened long-range Coulomb interaction alone…
The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant…
We study the thermoelectrical transports for an interacting dot attached to two graphene electrodes. Graphene band structure shows a pseudogap density of states that affects strongly the transport properties. In this work, we focus on the…
An insulator-to-metal transition is observed in trilayer graphene based on the temperature dependence of the resistance under different applied gate voltages. At small gate voltages the resistance decreases with increasing temperature due…
Motivated by the recent experimental detection of superconductivity in Bernal bilayer (AB) and rhombohedral trilayer (ABC) graphene, we study the emergence of superconductivity in multilayer graphene based on a Kohn-Luttinger (KL)-like…
The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the…
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…
Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will…
We report the experimental demonstration of a magnetologic gate built on graphene at room temperature. This magnetologic gate consists of three ferromagnetic electrodes contacting a single layer graphene spin channel and relies on spin…
We study all-carbon-hydrogen molecular transistors where zigzag graphene nanoribbons play the role of three metallic electrodes connected to a ring-shaped 18-annulene molecule. Using the nonequilibrium Green function formalism combined with…
We demonstrate top-gated field effect transistor made of reduced graphene oxide (RGO) monolayer (graphene) by dielectrophoresis. Raman spectrum of RGO flakes of typical size of 5{\mu}m x 5{\mu}m show a single 2D band at 2687 cm-1,…
We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range…
We report measurements on single-electron pumps, consisting of two metallic islands formed by three tunnel junctions in series. We focus on the linear-response conductance as a function of gate voltage and temperature of three samples with…
We demonstrate single electron shuttling through two coupled nanomechanical pendula. The pendula are realized as nanopillars etched out of the semiconductor substrate. Coulomb blockade is found at room temperature, allowing metrological…
This work evaluates the performance of carbon nanotube field effect transistors (CNTFET) using few layer graphene as the contact electrode material. We present the experimental results obtained on the barrier height at CNT graphene junction…
We propose a superconducting phase-controlled thermal switch based on a four-terminal graphene-superconductor system. By the coupling of two superconducting leads on a zigzag graphene nanoribbon, both the normal-transmission coefficient and…
Dots are ideal systems to study fundamentals on heat transfer at the nanoscale and promising nanoscale heat-engines and thermal devices. Here, we report on the validation of our theoretical model on the thermal conductance of a metallic dot…
Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET),…
Room-temperature ferromagnetic semiconductor is vital in nonvolatile digital circuits and it can provide an idea system where we can make use of both charge and spin of electrons. However, seeking room-temperature ferromagnetic…
The electric field effect is a useful means of elucidating intrinsic material properties as well as for designing functional devices. The electric-double-layer transistor (EDLT) enables the control of carrier density in a wide range, which…