Related papers: Resistive Switching in Nanodevices
Nonlinear and hysteretic electrical devices are needed for applications from circuit protection to next-generation computing. Widely-studied devices for resistive switching are based on mass transport, such as the drift of ions in an…
Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…
Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…
We investigate the dramatic switch of resistance in ordered correlated insulators, when driven out of equilibrium by a strong voltage bias. Microscopic calculations on a driven-dissipative lattice of interacting electrons explain the main…
Deposition of MoS2 on (111)-Au alters the electronic properties of MoS2. In this study, we investigate the free-standing MoS2 monolayer and the MoS2~\(111)-Au heterostructure, with and without strain, as well as defects of interest in…
We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical…
Mott's metal-insulator transition at an interface due to band bending is studied by the density matrix renormalization group (DMRG). We show that the result can be recovered by a simple modification of the conventional Poisson's equation…
We demonstrate a controllable electromagnetic wave reflector/absorber for different polarizations with metamaterial involving electromagnetic resonant structures coupled with diodes. Through biasing at different voltages to turn ON and OFF…
We analyze nonlinear properties of microstructured materials with negative refraction, the so-called left-handed metamaterials. We consider a two-dimensional periodic structure created by arrays of wires and split-ring resonators embedded…
We report the detailed current-voltage (I-V) characteristics of resistance switching in NiO thin films. In unipolar resistance switching, it is commonly believed that conducting filaments will rupture when NiO changes from a low resistance…
Recently the memristive electrical transport properties in NbO$_2$ have attracted much attention for their promising application to the neuromorphic computation. At the center of debates is whether the metal-to-insulator transition (MIT)…
We designed and experimentally demonstrated a four-terminal superconducting device which can function as a non-latching (reversible) superconducting switch from the diode regime to the resistive state by applying a control current much…
We study transport properties of a single electron transistor based on elastic nanotube. Assuming that an external compressive force is applied to the nanotube, we focus on the vicinity of the Euler buckling instability. We demonstrate that…
The interplay between charge ordering and its manifestation in macroscopic electrical transport in low-dimensional materials is crucial for understanding resistive switching mechanisms. In this study, we investigate the electronic transport…
Magnetic nanoparticles play a crucial role in different fields such as biomedicine or information and quantum technologies. These applications require nanoparticles with a single, well-defined energy minimum, free of metastable states, and…
Superconducting devices, which rely on modulating a complex superconducting order parameter in a Josephson junction, have been developed for low power logic operations, high-frequency oscillators, and exquisite magnetic field sensors.…
The state of a 2-D random resistor network, resulting from the simultaneous evolutions of two competing biased percolations, is studied in a wide range of bias values. Monte Carlo simulations show that when the external current $I$ is below…
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional…
When the electron density of highly crystalline thin films is tuned by chemical doping or ionic liq- uid gating, interesting effects appear including unconventional superconductivity, sizeable spin-orbit coupling, competition with…
Modulation of stress anisotropy of magnetostrictive nanomagnets with strain offers an extremely energy-efficient method of magnetization reversal. The reversal process, however, is often incoherent and hence error-prone in the presence of…