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Related papers: Resistive Switching in Nanodevices

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Developing electronic devices capable of emulating biological functions is essential for advancing brain-inspired computation paradigms such as neuromorphic computing. In recent years, two-dimensional materials have emerged as promising…

The oscillatory response of nonlinear systems exhibits characteristic phenomena such as multistability, discontinuous jumps and hysteresis. These can be utilized in applications leading, e.g., to precise frequency measurement, mixing,…

Mesoscale and Nanoscale Physics · Physics 2015-05-14 Quirin P. Unterreithmeier , Thomas Faust , Jorg P. Kotthaus

We report an unusual breakdown of the magnetically induced Wigner solid in an exceptional two-dimensional electron gas. The current-voltage characteristic is found to be hysteretic in the voltage biased setup and has a region of negative…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 G. A. Csathy , D. C. Tsui , L. N. Pfeiffer , K. W. West

The resistive transition of granular high-T$_c$ superconductors, characterized by either weak (YBCO-like) or strong (MgB$_2$-like) links, occurs through a series of avalanche-type current density rearrangements. These rearrangements…

Superconductivity · Physics 2015-05-13 L. Ponta , A. Carbone , M. Gilli , P. Mazzetti

The voltage dependence of nanoelectromechanical effects in a system where the quantized mechanical vibrations of a quantum dot are coupled to coherent tunneling of electrons through a single level in the dot is studied. It is found that…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 D. Fedorets

We study analytically the precessional switching of the magnetization of a thin macrospin. We analyze its response when subjected to an external field along its in-plane hard axis. We derive the exact trajectories of the magnetization. The…

Strongly Correlated Electrons · Physics 2009-11-10 T. Devolder , C. Chappert

Stochastic micromagnetic simulations are employed to study switching in three-dimensional magnetic nanopillars exposed to highly misaligned fields. The switching appears to proceed through two different decay modes, characterized by very…

Statistical Mechanics · Physics 2007-05-23 S. H. Thompson , G. Brown , P. A. Rikvold

This paper examines the resistive switching characteristics of LPCVD SiNx MNOS ReRAM cells on both heavily doped n- and p-type silicon substrates, focusing on the effects of nitrogen doping. Detailed comparisons of electrical properties…

The inherent stochasticity in many nano-scale devices makes them prospective candidates for low-power computations. Such devices have been demonstrated to exhibit probabilistic switching between two stable states to achieve stochastic…

Emerging Technologies · Computer Science 2018-05-24 Indranil Chakraborty , Amogh Agrawal , Kaushik Roy

We discuss the physical properties of realistic memristive, memcapacitive and meminductive systems. In particular, by employing the well-known theory of response functions and microscopic derivations, we show that resistors, capacitors and…

Mesoscale and Nanoscale Physics · Physics 2013-07-04 M. Di Ventra , Y. V. Pershin

A hybrid superconductor--two-dimensional electron gas microdevice is presented. Its working principle is based on the suppression of Andreev reflection at the superconductor-semiconductor interface caused by a magnetic barrier generated by…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 C. Castellana , F. Giazotto , M. Governale , F. Taddei , F. Beltram

Memristors, when utilized as electronic components in circuits, can offer opportunities for the implementation of novel reconfigurable electronics. While they have been used in large arrays, studies in ensembles of devices are comparatively…

Applied Physics · Physics 2022-04-06 Vasileios Manouras , Spyros Stathopoulos , Alex Serb , Themis Prodromakis

Understanding the system-level spectral immittance response of capacitive energy storage devices with analytically tractable physics-based models is not only important for the progress of the technology, but also allows to develop new…

Applied Physics · Physics 2022-02-22 Anis Allagui , Hachemi Benaoum , Hichem Eleuch , Chunlei Wang

While insensitive to weak non magnetic disorder, an s-wave superconductor can be driven insulating by strong disorder. Using a scheme that captures the correct ground state, and fully retains thermal amplitude and phase fluctuations, we…

Superconductivity · Physics 2015-06-18 Sabyasachi Tarat , Pinaki Majumdar

There has been much interest recently in the discovery of thermally induced magnetisation switching, where a ferrimagnetic system can be switched deterministically without and applied magnetic field. Experimental results suggest that the…

Materials Science · Physics 2013-11-26 J. Barker , U. Atxitia , T. A. Ostler , O. Hovorka , O. Chubykalo-Fesenko , R. W. Chantrell

Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As alternative to high…

Applied Physics · Physics 2020-04-27 Beatriz Martín-García , Davide Spirito , Roman Krahne , Iwan Moreels

Exploration of novel resistive switching materials attracts attention to replace conventional Si-based transistors and to achieve neuromorphic computing that can surpass the limit of the current Von-Neumann computing for the time of…

Some correlated materials display an insulator-to-metal transition as the temperature is increased. In most cases this transition can also be induced electrically, resulting in volatile resistive switching due to the formation of a…

TiSe2 has received much attention among the transition metals chalcogenides because of its thrilling physical properties concerning atypical resistivity behavior, emerging of charge density wave (CDW) state, induced superconductivity etc.…

Mesoscale and Nanoscale Physics · Physics 2024-04-15 D. L. Bashlakov , O. E. Kvitnitskaya , S. Aswartham , Y. Shemerliuk , H. Berger , D. V. Efremov , B. Büchner , Yu. G. Naidyuk

The electronic origin of a large resistance change in nanoscale junctions incorporating spin crossover molecules is demonstrated theoretically by using a combination of density functional theory and the non-equilibrium Green's functions…

Mesoscale and Nanoscale Physics · Physics 2012-06-01 N. Baadji , S. Sanvito