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Current portable memory device relies heavily on flash memory technology for its implementation. New generation of non-volatile memory is likely to replace floating gates, charge-trapping memory currently still suffering from inadequate…
Charge-trap memory with high-\k dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention…
Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however…
The object of this article is to review the development of ultrahigh-density, nanoscale data storage, i.e., nanostorage. As a fundamentally new type of storage system, the recording mechanisms of nanostorage may be completely different to…
A new concept for nonvolatile superconducting memories is proposed. The devices combine ferromagnetic dots for the storage of the data and Josephson junctions for their readout. Good scalability is expected for large scale integration.…
Non-volatile, byte addressable, memory technology with performance close to main memory promises to revolutionise computing systems in the near future. Such memory technology provides the potential for extremely large memory regions (i.e. >…
Atomically thin layered two-dimensional materials, including transition-metal dichacolgenide (TMDC) and black phosphorus (BP), (1) have been receiving much attention, because of their promising physical properties and potential applications…
We present a graphene-based memory platform built on dual-gated field-effect transistors (GFETs). By integrating a lithographically defined metal patch directly atop the hexagonal boron nitride (hBN)-graphene channel, the device functions…
The conventional von Neumann architecture has been revealed as a major performance and energy bottleneck for rising data-intensive applications. %, due to the intensive data movements. The decade-old idea of leveraging in-memory processing…
Deep Learning neural networks are pervasive, but traditional computer architectures are reaching the limits of being able to efficiently execute them for the large workloads of today. They are limited by the von Neumann bottleneck: the high…
High capacity and scalable memory systems play a vital role in enabling our desktops, smartphones, and pervasive technologies like Internet of Things (IoT). Unfortunately, memory systems are becoming increasingly prone to faults. This is…
Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a…
We put forward a new proposal of designing charge-based logic devices considering a cyclic molecule that can be programmed and re-programmed for different functional logical operations and suitably engineered for data storage as well. The…
Non-Volatile Main Memories (NVMMs) have recently emerged as promising technologies for future memory systems. Generally, NVMMs have many desirable properties such as high density, byte-addressability, non-volatility, low cost, and energy…
Non-volatile memory is expected to co-exist or replace DRAM in upcoming architectures. Durable concurrent data structures for non-volatile memories are essential building blocks for constructing adequate software for use with these…
We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…
Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…
The memory wall bottleneck is a key challenge across many data-intensive applications. Multi-level FeFET-based embedded non-volatile memories are a promising solution for denser and more energy-efficient on-chip memory. However, reliable…
Emergent nanoscale non-volatile memory technologies with high integration density offer a promising solution to overcome the scalability limitations of CMOS-based neural networks architectures, by efficiently exhibiting the key principle of…
Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…