Related papers: Exploring properties of the integrating pixels
We have been developing event-driven SOI Pixel Detectors, named `XRPIX' (X-Ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical satellite with wide band coverage from 0.5 keV to 40 keV.…
In order to fully exploit the physics potential of the future high energy e+e- linear collider, a Vertex Tracker able to provide particle track extrapolation with very high resolution is needed. Hybrid Si pixel sensors are an attractive…
This paper presents a novel approach using multiple linear regression to process transient signals from silicon photomultipliers. The method provides excellent noise suppression and pulse detection in scenarios with a high pulse count rate…
Herein, the concept of point of darkness based on polarized light phase difference and absorption of light is demonstrated by simulations using low refractive index and extinction coefficient semiconductor and dielectric, and high…
This report reviews current trends in the R&D of semiconductor pixellated sensors for vertex tracking and radiation imaging. It identifies requirements of future HEP experiments at colliders, needed technological breakthroughs and…
In this paper, we introduce an iterative speckle filtering method for polarimetric SAR (PolSAR) images based on the bilateral filter. To locally adapt to the spatial structure of images, this filter relies on pixel similarities in both…
We present the results of the characterization of novel n-in-p planar pixel detectors, designed for the future upgrades of the ATLAS pixel system. N-in-p silicon devices are a promising candidate to replace the n-in-n sensors thanks to…
We have experimentally studied polarization properties of the two-dimensional coupled photonic crystal microcavity arrays, and observed a strong polarization dependence of the transmission and reflection of light from the structures - the…
In silicon sensors high densities of electron-hole pairs result in a change of the current pulse shape and spatial distribution of the collected charge compared to the situation in presence of low charge carrier densities. This paper…
We propose easy ways of correcting for the systematic errors caused by the photon noise and the pixelation effect in cosmic shear measurements. Our treatment of noise can reliably remove the noise contamination to the cosmic shear even when…
We propose a light dark matter search experiment using an SOI pixel detector (SOIPIX). The event-driven SOIPIX can be a powerful tool for detecting light WIMPs because of its low energy threshold (< 1 keV) and high timing resolution (few…
We have been developing X-ray SOI pixel Sensors, called "XRPIX", for future X-ray astronomy satellites that enable us to observe in the wide energy band of 0.5-40 keV. Since XRPIXs have the circuitry layer with a thickness of about 8 {\mu}m…
A closed-form approximate expression is presented for the short time-frame development of silicon diode sensor signals in the context of high frame-rate detection of incident X-ray fluxes, in the limit that the X-ray absorption profile…
We developed a beam telescope system comprising five layers of 300-$\mu$m-thick INTPIX4NA monolithic pixel sensors with each pixel size of 17 $\mu$m square. The sensors were fabricated using silicon-on-insulator (SOI) technology. The…
A new symmetrical four-wire sensor configuration has resulted in a fully integrated sound intensity sensor with significant lower noise floor and smaller size than its predecessors. An integrated sound pressure sensor was further…
The technique of current splitting is presented as part of an integrated circuit development for an X-ray imager. This method enables integration of charge signals of unprecedented magnitude in small pixels, achieving a dynamic range of…
Application of new detectors using Silicon-On-Insulator (SOI) technology has been started in the Photon Factory, KEK. This project has two purposes. The first purpose is to develop a pulse-counting-type X-ray detector which can be used in…
Digital camera pixels measure image intensities by converting incident light energy into an analog electrical current, and then digitizing it into a fixed-width binary representation. This direct measurement method, while conceptually…
Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in…
Snapshot mosaic multispectral imagery acquires an undersampled data cube by acquiring a single spectral measurement per spatial pixel. Sensors which acquire $p$ frequencies, therefore, suffer from severe $1/p$ undersampling of the full data…