Related papers: Single Gate P-N Junctions in Graphene-Ferroelectri…
Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO$_{2}$ have been greatly…
The ability to create high-quality lateral p-n junctions at nanometer length scales is essential for the next generation of two-dimensional (2D) electronic and plasmonic devices. Using a charge-transfer heterostructure consisting of…
Electron pairing in the vast majority of superconductors follows the Bardeen-Cooper-Schrieffer theory of superconductivity, which describes the condensation of electrons into pairs with antiparallel spins in a singlet state with an s-wave…
We experimentally demonstrate a simple graphene/ ferrolectric device, termed Ferrotronic (electronic effect from ferroelectric) device in which the band-structure of single-layer graphene is modified. The device architecture consists of…
Graphene grown on metal surface, Cu(111), with a boron nitride(BN) buffer layer is studied for the first time. Our first-principles calculations reveal that charge is transferred from the copper substrate to graphene through the BN buffer…
We fabricate superconductor-graphene-superconductor Josephson junctions with superconducting regions made of lead (Pb). The critical current through grapehene may be modulated by external magnetic field; the resulting Fraunhofer…
Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…
The motion of massless Dirac-electrons in graphene mimics the propagation of photons. This makes it possible to control the charge-carriers with components based on geometrical-optics and has led to proposals for an all-graphene…
Here we present the theory of the conductivity of pn junction (pnJ) in graphene channel, placed on ferroelectric substrate, caused by ferroelectric domain wall (FDW) for the case of arbitrary current regime: from ballistic to diffusive one.…
Graphene is a promising candidate to succeed silicon based devices and doping holds the key to graphene electronics. Conventional doping methods through surface functionalization or lattice modification are effective in tuning carrier…
Combining experiment and theory, we investigate how the naturally created heterojunction at a graphene and metallic contact is modulated via interaction with molecular hydrogen (H2). Due to electrostatic interaction, a Cr/Au electrode…
In contrast to graphene which is a gapless semiconductor, graphane, the hydrogenated graphene, is a semiconductor with an energy gap. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of…
The high carrier mobility in graphene promises its utility in electronics applications. Azobenzene is a widely studied organic molecule for switchable optoelectronic devices that can be synthesized with a wide variety of ligands and…
We explore the chiral transmission of electrons across graphene heterojunctions for electronic switching using gate geometry alone. A sequence of gates is used to collimate and orthogonalize the chiral transmission lobes across multiple…
The review is focused on our recent predictions of nontrivial physical phenomena taking place in the nanostructure single-layer grapheme on ferroelectric substrate, which are related with magnetic field. In particular we predicted that…
The focusing of electric current by a single \textit{p-n} junction in graphene is predicted. We show that precise focusing can be achieved by fine-tuning the densities of carriers on the n- and p-sides of the junction to equal values,…
Realization of logic circuits from graphene is very attractive for high-speed nanoelectronics. However, the intrinsic ambipolar nature hinders the formation of graphene logic devices with the conventional complementary architecture. Using…
We study spin transport in normal/ferromagnetic/normal graphene junctions where a gate electrode is attached to the ferromagnetic graphene. We find that due to the exchange field of the ferromagnetic graphene, spin current through the…
We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap--a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realise p-n-p structures where the…
Monolayer graphene with an energy gap presents a pseudospin symmetry broken ferromagnet with a perpendicular pseudomagnetization whose direction is switched by altering the type of doping between n and p. We demonstrate an electrical…