Related papers: Single Gate P-N Junctions in Graphene-Ferroelectri…
Employing density-functional theory (DFT) calculations, the generalized-stacking-fault energy (GSFE) curves along two crystallographic slips, glide and shuffle, for both pristine graphene and impurity of boron (B) or nitrogen (N) doped…
This paper is withdrawn by the authors. We theoretically examine graphene plasmon polaritons (GPP) supported by a sheet of graphene sandwiched between two dielectric media. The influence of the dielectric environment on GPP's is studied…
Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the…
Measuring the transport of electrons through a graphene sheet necessarily involves contacting it with metal electrodes. We study the adsorption of graphene on metal substrates using first-principles calculations at the level of density…
The conductance of ballistic graphene at the neutrality point is due to coherent electron tunneling between the leads, the so called pseudodiffusive regime. The conductance scales as function of the sample dimensions in the same way as in a…
Graphene on a dielectric substrate exhibits spatial doping inhomogeneities, forming electron-hole puddles. Understanding and controlling the latter is of crucial importance for unraveling many of graphene's fundamental properties at the…
Superconductivity in graphene has been highly sought after for its promise in various device applications and for general scientific interest. Ironically, the simple electronic structure of graphene, which is responsible for novel quantum…
To assist the design of novel, highly efficient molecular junctions, a deep understanding of the precise charge transport mechanisms through these devices is of prime importance. In the present contribution, we describe a procedure to…
Atomic-scale fabrication is an outstanding challenge and overarching goal for the nanoscience community. The practical implementation of moving and fixing atoms to a structure is non-trivial considering that one must spatially address the…
Graphene is an excellent candidate for the next generation of electronic materials due to the strict two-dimensionality of its electronic structure as well as the extremely high carrier mobility. A prerequisite for the development of…
We present transport measurements on a bilayer graphene sheet with homogeneous back gate and split top gate. The electronic transport data indicates the capability to direct electron flow through graphene nanostructures purely defined by…
The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the…
We fabricate twisted double bilayer graphene devices with zero twist angle and a set of local top and bottom gates aligned perpendicularly to each other. A 1D PN junction can be electrostatically defined when the gate voltages applied to…
A central feature of many van der Waals (vdW) materials is the ability to precisely control their charge doping, $n$, and electric displacement field, $D$, using top and bottom gates. For devices composed of only a few layers, it is…
Engineered substrates offer a promising avenue towards graphene devices having tunable properties. In particular, topographically patterned substrates can expose unique behavior due to their ability to induce local variations in strain and…
Pyroelectricity refers to the accumulation of charges due to changes in the spontaneous polarization of ferroelectric materials when subjected to temperature variations. Typically, these pyroelectric charges are considered unstable and…
Imperfections change essentially the electronic transport properties of graphene. Motivated by a recent experiment reporting on the possible application of graphene as junctions, we study transport properties in graphene-based junctions…
Graphene, a one-atom thick zero gap semiconductor [1, 2], has been attracting an increasing interest due to its remarkable physical properties ranging from an electron spectrum resembling relativistic dynamics [3-12] to ballistic transport…
Gapless spectrum of graphene allows easy spatial separation of electrons and holes with an external in-plane electric field. Guided collective plasmon modes can propagate along the separation line, whose amplitude decays with the distance…
We investigate the transport characteristics of monolayer graphene p-n junctions by means of the non-equilibrium Green's function technique. It is shown that thanks to the high interband tunneling of chiral fermions and to a finite bandgap…