Related papers: All-electric all-semiconductor spin field effect t…
The theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the current flowing from the source (spin injector) to the…
We examine transport through a quantum dot coupled to three ferromagnetic leads in the regime of weak tunnel coupling. A finite source-drain voltage generates a nonequilibrium spin on the otherwise non-magnetic quantum dot. This spin…
Implementation of quantum information processing faces the contradicting requirements of combining excellent isolation to avoid decoherence with the ability to control coherent interactions in a many-body quantum system. For example, spin…
A possibility of controlled manipulation of electron spin states has been investigated for a cylindrical two-dimensional electron gas confined in a semiconductor nanotube/cylindrical nanowire with the Rashba spin-orbit interaction. We…
We consider the electron transport in the Datta-Das spin transistor within the two-subband model taking into account the intra- and inter-subband spin-orbit (SO) interaction and study the influence of the inter-subband SO coupling on the…
We describe how quantum information may be transferred from photon polarization to electron spin in a semiconductor device. The transfer of quantum information relies on selection rules for optical transitions, such that two superposed…
For the last years spin effects in semiconductors have been of great interest not only in the context of solid state physics, but also for their potential usage in technology. In this paper we give a short review of spintronic materials, in…
Altermagnets hold great potential for spintronic applications, yet their intrinsic spin dynamics and associated transport properties remain largely unexplored. Here, we investigate spin-resolved quantum transport in a multi-terminal setup…
Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk…
We analyze the spin expectation values for injected spin-polarized electrons (spin vectors) in a [001]-grown Rashba-Dresselhaus two-dimensional electron gas (2DEG). We generalize the calculation for point spin injection in semi-infinite…
The development of the first generation of commercial quantum computers is based on superconductive qubits and trapped ions respectively. Other technologies such as semiconductor quantum dots, neutral ions and photons could in principle…
When a charge current is injected into an altermagnet along a suitable crystallographic direction, a transverse spin current can be generated. This so-called spin-splitter effect does not rely on spin-orbit coupling, and is thus distinct…
Spin injection efficiency based on conventional ferromagnet (or half-metallic ferromagnet) /semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors…
Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue…
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…
The manipulation of the electron spin degree of freedom is at the core of the spintronics paradigm, which offers the perspective of reduced power consumption, enabled by the decoupling of information processing from net charge transfer.…
The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…