Related papers: All-electric all-semiconductor spin field effect t…
All-electrical control of spin transport in nanostructures has been the central interest and chal- lenge of spin physics and spintronics. Here we demonstrate on-chip spin polarizing/filtering actions by driving the gate-defined one…
Injecting spins into a semiconductor channel and transforming the spin information into a significant electrical output signal is a long standing problem in spintronics. Actually, this is the prerequisite of several concepts of spin…
We present a theoretical model that describes electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically…
The wave nature of electrons in semiconductor nanostructures results in spatial interference effects similar to those exhibited by coherent light. The presence of spin-orbit coupling renders interference in spin space and in real space…
Electron spin qubits in semiconductors are attractive from the viewpoint of long coherence times. However, single spin measurement is challenging. Several promising schemes incorporate ancillary tunnel couplings that may provide unwanted…
The spin states of electrons confined in semiconductor quantum dots form a promising platform for quantum computation. Recent studies of silicon CMOS qubits have shown coherent manipulation of electron spin states with extremely high…
A crucial requirement for quantum information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin based all-electrical two-qubit gate consisting of single spin rotations and inter-dot spin…
The electronic and nuclear spin degrees of freedom for donor impurities in semiconductors form ultra coherent two-level systems that are useful for quantum information applications. Spins naturally have magnetic dipoles, so alternating…
Emerging two-dimensional (2D) magnetic semiconductors represent transformative platforms to explore magneto-optics and opto-spintronic applications. Though 2D opto-spintronics has attracted tremendous research efforts in spin-dependent…
A number of spintronic junction transistors, that exploit the spin degree of freedom of an electron in addition to the charge degree of freedom, have been proposed to provide simultaneous non-volatile storage and signal processing…
In spin-based quantum information processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance…
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict…
It is shown that, for appropriate values of electron energy, the silicene dot can work as a controllable spin polarizer. The spin polarizer can polarize the spin of transmitted electrons from nearly pure down to nearly pure up by changing…
Two promising architectures for solid-state quantum information processing are electron spins in semiconductor quantum dots and the collective electromagnetic modes of superconducting circuits. In some aspects, these two platforms are dual…
An alternating electric field, applied to a quantum dot, couples to the electron spin via the spin-orbit interaction. We analyze different types of spin-orbit coupling known in the literature and find two efficient mechanisms of spin…
In an inhomogeneously doped magnetic semiconductor, an interplay between an equilibrium magnetization and injected nonequilibrium spin leads to the spin-voltaic effect--a spin analogue of the photo-voltaic effect. By reversing either the…
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a…
We consider a two-channel spin transistor with weak spin-orbit induced interband coupling. We show that the coherent transfer of carriers between the coupled channels gives rise to an \textit{additional} spin rotation. We calculate the…
The electron spin is emerging as a new powerful tool in the electronics and optics industries. Many proposed applications involve the creation of spin currents, which so far have proven to be difficult to produce in semiconductor…
We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform…