Related papers: Defects responsible for abnormal n-type conductivi…
Defects in halide perovskites play an essential role in determining the efficiency and stability of the resulting optoelectronic devices. Here, we present a systematic study of intrinsic point defects in six primary metal halide…
Erbium (Er) doped GaN has been studied extensively for optoelectronic applications, yet its defect physics is still not well understood. In this work, we report a first-principles hybrid density functional study of the structure,…
The capacitance and differential conductance of MBE-grown AlGaAs/GaAs p-i-n diodes are investigated. In these diodes, the p-doped layer, an adjacent intrinsic spacer, and a central barrier are made of AlGaAs. Capacitance oscillations and…
Here we propose to induce magnetism in semiconductor utilizing the unique properties of the interstitial defect to act as the magnetic impurity within the alpha-PbO crystal structure. The Pbi interstitial generates the p-localized state…
We report superconducting properties of AgSnSe2 which is a conventional type-II superconductor in the very dirty limit due to intrinsically strong electron scatterings. While this material is an isotropic three-dimensional (3D)…
The \emph{p}-type Bi$_{2}$Se$_{3}$ is much desirable as a promising thermoelectric material and topological insulator, while the naturally grown Bi$_{2}$Se$_{3}$ is always \emph{n}-type doped by native point defects. Here we use…
Within the t-t'-J model, the charge asymmetry in superconductivity of hole- and electron-doped cuprates is studied based on the kinetic energy driven superconducting mechanism. It is shown that superconductivity appears over a narrow range…
The effect of Ag addition (0-20 wt%) on polycrystalline Sr0.6K0.4Fe2As2 superconductor has been investigated. It is found that the critical transition temperature Tc was not depressed, and the irreversibility field Hirr and hysteresis…
Employing Nernst-Einstein decomposition $\sigma=e^2\chi_c D$ of the conductivity $\sigma$ onto charge susceptibility (compressibility) $\chi_c$ and diffusion constant $D$, we argue that the bad-metallic behavior of $\sigma$ in the regime of…
In this paper, a comprehensive study of the effects of Ni-doping on structural, electrical, thermal and magnetic properties of the NbB2 is presented. Low amounts (\leq 10 %) of Ni substitution on Nb sites cause structural distortions and…
It is noteworthy that chemical substitution of BaFe2As2 (122) with the noble elements Cu and Au gives superconductivity with a maximum Tc=3 K, while Ag substitution (Ag-122) stays antiferromagnetic. For Ba(Fe1-xTMx)2As2, TM= Cu, Au, or Ag,…
We report properties of the reported transparent conductor CuI, including the effect of heavy $p$-type doping. The results, based on first principles calculations, include analysis of the electronic structure and calculations of optical and…
Due to high density of native defects, the prototypical topological insulator (TI), Bi$_2$Se$_3$, is naturally n-type. Although Bi$_2$Se$_3$ can be converted into p-type by substituting 2+ ions for Bi, only light elements such as Ca have…
We perform hybrid-density functional calculations to investigate the charged defect formation energy of native point defects in $Mg_2 Si$, $Mg_2 Sn$, and their solid solutions. The band gap correction by hybrid-density functional is found…
Doping-induced superconductivity in group IV elements may enable quantum functionalities in material systems accessible with well-established semiconductor technologies. Non-equilibrium hyperdoping of group III atoms into C, Si, or Ge can…
High pressure in-situ synchrotron X-ray diffraction experiments were performed on Ag2Te up to 42.6 GPa at room temperature and four phases were identified. Phase I ({\beta}-Ag2Te) transformed into phase II at 2.4 GPa, and phase III and…
We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or non-magnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of…
The dependence of the electrical conductivity on the oxygen partial pressure is calculated for the prototypical perovskite $\Ba\Ti\O_3$ based on data obtained from first-principles calculations within density functional theory. The…
In contrast to monolayer graphene, in bilayer graphene (BLG) one can induce a tunable bandgap by applying an external electric field, which makes it suitable for field effect applications. Extrinsic doping of BLGs enriches the electronic…
The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant…