Related papers: Electrical properties of Bi-implanted amorphous ch…
We present a comprehensive study of the crystal structure of the thin-film, ferromagnetic topological insulator (Bi, Sb)$_{2-x}$V$_x$Te$_3$. The dissipationless quantum anomalous Hall edge states it manifests are of particular interest for…
The photo-luminescence features of Ge-oxygen defect centers in a 100nm thick Ge-doped silica film on a pure silica substrate were investigated by looking at the emission spectra and time decay detected under synchrotron radiation excitation…
Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid…
This work describes the microstructure and transport properties of GeBiTe films with emphasis on their out-of-equilibrium behavior. Persistent-photoconductivity (PPC), previously studied in the phase-change compound GeSbTe is also quite…
We present observations of the insulator-superconductor transition in ultrathin films of Bi on amorphous quartz, quartz coated with Ge, and for the first time, solid xenon condensed on quartz. The relative permeability $\epsilon_r$ ranges…
Amorphous Si (a-Si) nanostructures are ubiquitous in numerous electronic and optoelectronic devices. Amorphous materials are considered to possess the lower limit to the thermal conductivity (k), which is ~1 W/m-K for a-Si. However, recent…
Charge transport in amorphous semiconductors is considerably more complicated than process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are…
There is an ongoing debate about the relative importance of structural change versus doping charge carriers on the mechanism of superconductivity in Fe-based materials. Elucidating this issue is a major challenge since it would require a…
Strong disorder has a crucial effect on the electronic structure in quantum materials by increasing localization, interactions, and modifying the density of states. Bi$_x$TeI films grown at room temperature and \SI{230}{K} exhibit dramatic…
We have investigated the influence of the superconducting layer thickness, d, on the structural and transport properties of Co-doped BaFe2As2 films deposited on Fe-buffered MgO substrates by pulsed laser deposition. The superconducting…
The dependence of initial magnetic permeability {\mu}i of based on the Fe-Si-B amorphous and nanocrystalline alloys on the {\gamma}-irradiation dose was investigated by the method of inductance factor determination. It was determined that…
Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and…
Thin films of alkali metals when sandwiched at both surfaces by thin metal films loose their conductance. The superconducting proximity effect is used to investigate the change in the alkali film. On the length scale of the film thickness…
Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$…
A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged…
Using scanning tunnel microscopy (STM), we investigate the superconductivity and vortex properties in topological insulator Bi$_{2}$Te$_{3}$ thin films grown on the iron-based superconductor FeTe$_{0.55}$Se$_{0.45}$. The proximity-induced…
Superconducting films of alpha-Ta are promising candidates for the fabrication of advanced superconducting qubits. However, alpha-Ta films suffer from many growth-induced structural inadequacies that negatively affect their performance. We…
Electron transport properties of a topological insulator Bi$_2$Se$_3$ thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are…
We consider in our work high quality single crystal thin films of Bi2Se3, grown by molecular beam epitaxy, both with and without Pb doping. Our ARPES data demonstrate topological surface states with a Fermi level lying inside the bulk band…
Despite the highly porous nature with significantly large surface area, metal organic frameworks (MOFs) can be hardly used in electronic, and optoelectronic devices due to their extremely poor electrical conductivity. Therefore, the study…