Related papers: Interface Engineering to Create a Strong Spin Filt…
With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the…
Ferromagnetic semiconductor europium monoxide (EuO) is believed to be an effective spin injector when directly integrated with silicon. Injection through spin-selective ohmic contact requires superb structural quality of the interface…
Materials in which charge and spin degrees of freedom interact strongly offer applications known as spintronics. Following a remarkable success of metallic spintronics based on the giant-magnetoresistive effect, tremendous efforts have been…
Epitaxial spin filter tunnel junctions based on the ferromagnetic semiconductor europium monoxide, EuO, are investigated by means of density functional theory. In particular, we focus on the spin transport properties of…
We demonstrate a novel route to prepare thin films of the ferromagnetic insulator Europium monoxide. Key is a redox-controlled interface reaction between metallic Eu and the substrate SrTiO$_3$ as the supplier of oxygen. The process allows…
Spin-polarized two-dimensional electron gases (2DEGs) are of particular interest for functional oxide electronics applications. The redox-created 2DEG residing on the strontium titanate, SrTiO$_3$ (STO), side of a europium monoxide…
We create a two-dimensional electron system (2DES) at the interface between EuO, a ferromagnetic insulator, and SrTiO3, a transparent non-magnetic insulator considered the bedrock of oxide-based electronics. This is achieved by a controlled…
Silicon spintronics requires injection of spin-polarized carriers into Si. An emerging approach is direct electrical injection from a ferromagnetic semiconductor - EuO being the prime choice. Functionality of the EuO/Si spin contact is…
Muon spin rotation with low-energy muons (LE{\mu}SR) is a powerful nuclear method where electrical and magnetic properties of surface-near regions and thin films can be studied on a length scale of $\approx$\SI{200}{\nano\meter}. In this…
Epitaxial growth of thin-film heterostructures is generally considered the most successful procedure to obtain interfaces of excellent structural and electronic quality between three-dimensional materials. However, these interfaces can only…
Controlling interfacial interactions in magnetic/topological insulator heterostructures is a major challenge for the emergence of novel spin-dependent electronic phenomena. As for any rational design of heterostructures that rely on…
The nanoelectronic applications of current ferroelectrics have been greatly impeded by their incompatibility with silicon. In this paper we propose a way to induce ferroelectricity in silicon dioxide (SiO2), which is still the most widely…
We have demonstrated the deposition of EuO films on graphene by reactive molecular beam epitaxy in a special adsorption-controlled and oxygen-limited regime, which is a critical advance toward the realization of the exchange proximity…
Utilizing a SU(2) gauge symmetry technique in the quasiclassical diffusive regime, we theoretically study finite-sized two-dimensional intrinsic spin-orbit coupled superconductor/normal-metal/superconductor (S/N/S) hybrid structures with a…
Epitaxial growth of atomically-sharp interfaces serves as one of the main building blocks of nanofabrication. Such interfaces are crucial for the operation of various devices including transistors, photo-voltaic cells, and memory…
We investigate the spin-valley polarization in MoTe$_2$ monolayer on (111) and (001) surfaces of ferromagnetic semiconductor EuO based on first-principles calculations. We consider surface reconstructions for EuO(111). We find that there is…
Ultrathin two-dimensional (2D) electronic systems at the interfaces of layered materials are highly desirable platforms for exploring of novel quantum phenomena and developing advanced device applications. Here, we investigate ultrathin…
Proximity effects allow for the adjustment of magnetic properties in a physically elegant way. If two thin ferromagnetic (FM) films are brought into contact, electronic coupling alters their magnetic exchange interaction at their interface.…
The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. Herein we show that metallic interfaces can be realized in SrTiO3-based…
Low-energy light ion beams are an essential resource in lithography for nanopatterning magnetic materials and interfaces due to their ability to modify the structure and properties of metamaterials. Here we create…