Silicon spintronics requires injection of spin-polarized carriers into Si. An emerging approach is direct electrical injection from a ferromagnetic semiconductor - EuO being the prime choice. Functionality of the EuO/Si spin contact is determined by the interface band alignment. In particular, the band offset should fall within the 0.5-2 eV range. We employ soft-X-ray ARPES to probe the electronic structure of the buried EuO/Si interface with momentum resolution and chemical specificity. The band structure reveals a conduction band offset of 1.0 eV attesting the technological potential of the EuO/Si system.
@article{arxiv.1603.04666,
title = {Band Structure of EuO/Si Spin Contact: Justification for Silicon Spintronics},
author = {Leonid L. Lev and Dmitry V. Averyanov and Andrey M. Tokmachev and Federico Bisti and Victor A. Rogalev and Vladimir N. Strocov and Vyacheslav G. Storchak},
journal= {arXiv preprint arXiv:1603.04666},
year = {2016}
}