We investigate the spin-valley polarization in MoTe2 monolayer on (111) and (001) surfaces of ferromagnetic semiconductor EuO based on first-principles calculations. We consider surface reconstructions for EuO(111). We find that there is no direct chemical bonding between the reconstructed EuO(111) and the MoTe2 overlayer, in contrast to the case of the ideal EuO(111). However, there is a strong hybridization between the states of MoTe2 and the substrate states, which has a substantial impact on the valleys. The valley polarization due to the magnetic proximity effect is dependent on the detail of the interface structure, which is in the range of a few meV to about 40 meV. These values are at least one order of magnitude smaller than that induced by the ideal EuO(111). When the MoTe2 monolayer is interfaced with EuO(001), the valley polarization is about 3.2 meV, insensitive to the interface structure. By a low-energy effective Hamiltonian model, the effective Zeeman field induced by EuO(001) is about 27 T, comparable to that for WSe2/EuS obtained by experiment.
@article{arxiv.2010.06755,
title = {Effects of substrate-surface reconstruction and orientation on spin-valley polarization in MoTe$_2$/EuO},
author = {Ao Zhang and Zisheng Gong and Ziming Zhu and Anlian Pan and Mingxing Chen},
journal= {arXiv preprint arXiv:2010.06755},
year = {2020}
}