Ultrathin two-dimensional (2D) electronic systems at the interfaces of layered materials are highly desirable platforms for exploring of novel quantum phenomena and developing advanced device applications. Here, we investigate ultrathin heterostructures composed of SrIrO3 (SIO) and SrRuO3 (SRO) layers to uncover their emergent properties. Strikingly, despite the fact that both individual layers are antiferromagnetic insulators, the interfaced heterostructure exhibits emergent metallicity. Through transport measurements, magnetic characterization, and angle-resolved photoemission spectroscopy (ARPES), we analyze the underlying mechanisms governing this insulator-to-metal transition. Our findings reveal that the transition is driven by interface-induced magnetic reconstruction, which is further corroborated by density functional theory (DFT) calculations. The staggered Dzyaloshinskii-Moriya interaction at the SIO/SRO interface is identified as the key driving force for this spin reorganization, as it stabilizes ferromagnetism in the coupled antiferromagnetic insulating layers. These findings highlight the significant potential of engineering interfacial magnetic interactions as a powerful approach to generate and control emergent electronic properties, paving the way for novel functionalities that are unattainable in individual ultrathin films.
@article{arxiv.2503.21093,
title = {Insulator-to-Metal Transition via Magnetic Reconstruction at Oxide Interfaces},
author = {Zengxing Lu and Jiatai Feng and Xuan Zheng and You-guo Shi and Run-Wei Li and Carmine Autieri and Mario Cuoco and Milan Radovic and Zhiming Wang},
journal= {arXiv preprint arXiv:2503.21093},
year = {2025}
}