Related papers: Suspended graphene devices with local gate control…
The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approx. 10,000 cm2/Vs). However, the…
In this letter, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene…
A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…
We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 micrometers long. Measurements as…
A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a…
Self-heating is a severe problem for high-power GaN electronic and optoelectronic devices. Various thermal management solutions, e.g. flip-chip bonding or composite substrates have been attempted. However, temperature rise still limits…
We invented a method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. To stimulate the growth of graphene layers on oxidized silicon a catalyst system of nanometer thin…
We have developed the combination of an etching and deposition technique that enables the fabrication of locally gated graphene nanostructures of arbitrary design. Employing this method, we have fabricated graphene nanoconstrictions with…
Due to its high charge carrier mobility, broadband light absorption, and ultrafast carrier dynamics, graphene is a promising material for the development of high-performance photodetectors. Graphene-based photodetectors have been…
The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the…
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor…
we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…
The combination of graphene with silicon in hybrid devices has attracted attention extensively over the last decade. Most of such devices were proposed for photonics and radiofrequency applications. In this work, we present a unique…
We report on the fabrication and measurement of nanoscale devices based on bilayer graphene sandwiched between hexagonal boron nitride bottom and top gate dielectrics. The top gates are patterned such that constrictions and islands can be…
Herein we discuss the fabrication of ballistic suspended graphene nanostructures supplemented with local gating. Using in-situ current annealing, we show that exceptional high mobilities can be obtained in these devices. A detailed…
Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current…
Quantum confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder…
We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range…
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…
We propose two schemes of field-effect transistor based on gapped armchair graphene nanoribbons connected to metal leads, by introducing sidearms or on-site gate voltages. We make use of the band gap to reach excellent switch-off character.…