Related papers: Atomic origin of high temperature electron trappin…
The inter-device mismatch and intra-device temporal instability in the nanoscale CMOS circuits is examined from a unified point of view as a static and dynamic parts of the variability con-cerned with stochastic oxide charge trapping and…
Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are grounded. The emitted photons are caused by defect-assisted…
We report first-principles calculations that reveal the atomic forms, stability, and energy levels of carbon-related defects in SiC (0001)/SiO$_{\rm 2}$ systems. We clarify the stable position (SiC side, SiO$_{\rm 2}$ side, or just at the…
High-$T_{\rm C}$ superconductors show anomalous transport properties in their normal states, such as the bad-metal and pseudogap behaviors. To discuss their origins, it is important to speculate whether these behaviors are…
In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations. This insulating layer suffers of an electron trapping that…
Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of…
The cuprate Hg0.8Tl0.2Ba2Ca2Cu3O8.33 exhibits the highest superconducting transition temperature Tc of 138K. Achieving superconductivity at even higher temperatures, up to room temperature, represents the ultimate dream of humanity. As…
We use the one-dimensional object-oriented particle-in-cell Monte Carlo collision code oopd1 to explore the charged particle densities, the electronegativity, the electron energy probability function (EEPF), and the electron heating…
The lifetime of trapped ion ensembles corresponds to a crucial parameter determining the potential scalability of their prospective applications and is often limited by the achievable vacuum level in the apparatus. We report on the…
Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ…
The dynamic interplay between light and electric field control of charge states lies at the heart of developing multifunctional optoelectronic devices. While persistent photoconductivity (PPC) and gate-voltage (VG)-induced electron trapping…
Ionization of polar liquids and glasses often yields metastable electron centers collectively known as weakly bound (wb) electrons that absorb to the red of the ground state of the solvated/trapped electron. Formation of these species is…
SmB6 exhibits intermediate valence in the ground state and unusual behaviour at low temperatures. The resistivity and the Hall effect cannot be explained either by conventional sf-hybridization or by hopping transport in an impurity band.…
Typical sources of ultracold atoms operate with a considerable delay between the delivery of ensembles due to sequential trapping and cooling schemes. Therefore, alternative schemes for the continuous generation of ultracold atoms are…
We demonstrate a Magneto-Optical Trap (MOT) configuration which employs optical forces due to light scattering between electronically excited states of the atom. With the standard MOT laser beams propagating along the {\it x}- and {\it y}-…
Large power consumption of silicon CMOS electronics is a challenge in very-large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at…
To achieve room-temperature superconductivity, a mechanism is needed that provides heavy quasiparticles at room temperature. In heavy fermion systems such localization is prototypically present only at liquid helium temperatures. In these…
We developed a capacitor type heat flow switching device, in which electron thermal conductivity of the electrodes is actively controlled through the carrier concentration varied by an applied bias voltage. The devices consist of an…
Supercapacitors, S-C - capacitors that take advantage of the large capacitance at the interface between an electrode and an electrolyte - have found many short-term energy applications. We concentrate here on optically induced, electrical…
Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of…