Related papers: Shuttle-promoted nano-mechanical current switch
Shuttle-like mechanism of electron transport through a single level vibrating quantum dot is considered in the regime of strong electromechanical coupling. It is shown that the increment of shuttle instability is a nonmonotonic function of…
We propose a nanoscale device consisting of a double quantum dot with strong intra- and inter- dot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the…
The paper proposes the method to analyze the internal dynamics of nanoscopic systems by periodic modulation of the electrochemical potentials of the attached leads and measuring the time-averaged current. The idea is presented using the…
We analyze a quantum spin Hall (QSH) device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the…
A deep understanding of the correlation between electronic and mechanical degrees of freedom is crucial to the development of quantum devices in a nanoelectromechanical system (NEMS). In this work, we first establish a fully quantum…
Nanometric magnonic and spintronic devices need magnetic field control in addition to conventional electronic control. In this work we review ways to replace magnetic field control by an electronic one in order to circumvent appearance of…
We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the…
Self excitation is a mechanism which is ubiquitous for electromechanical power devices such as electrical generators. This is conventionally achieved by making use of the magnetic field component in electrical generators [1], where a good…
We investigate coherent electron transport through a parallel circuit of two quantum dots, each of which has a single tunable energy level. Electrons tunneling via each dot from the left lead interfere with each other at the right lead. It…
The current driven magnetization dynamics of a thin-film, three magnetic terminal device (spin-flip transistor) is investigated theoretically. We consider a magnetization configuration in which all magnetizations are in the device plane,…
We present a new nanoscale superconducting quantum interference device (SQUID) whose interference pattern can be shifted electrically in-situ. The device consists of a nanoscale four-terminal/four-junction SQUID fabricated at the apex of a…
Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel…
We propose a device that can operate as a magneto-resistive switch or oscillator. The device is based on a spin-thermo-electronic control of the exchange coupling of two strong ferromagnets through a weakly ferromagnetic spacer. We show…
We have performed non-local spin injection into a nano-scale ferromagnetic particle configured in a lateral spin valve structure to switch its magnetization only by spin current. The non-local spin injection aligns the magnetization of the…
We study the dynamics of the electron current in nanodevices where there are time-varying components and interactions. These devices are a nanojunction attached to heat baths and with dynamical electron-phonon interactions and a…
The magnetization detection and switching of an ultrasmall Stoner nanograin in a non-local spin valve (NLSV) device is studied theoretically. With the help of the rate equations, a unified description can be presented on the same footing…
We report transport measurements on a quantum dot in a partly suspended carbon nanotube. Electrostatic tuning allows us to modify and even switch 'on' and 'off' the coupling to the quantized stretching vibration across several charge…
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…
We introduce a design modification to conventional geometry of the cryogenic three-terminal switch, the nanocryotron (nTron). The conventional geometry of nTrons is modified by including parallel current-carrying channels, an approach aimed…
Measurements of magnetic hysteresis loops in single Co nanoparticles at dilution refrigerator temperatures are presented. The nanoparticles are in electric contact with bulk Al leads via tunnel junctions. The tunnel current versus magnetic…