Related papers: Nanosized Vertical Organic Spin-Valves
We measure the microwave signals produced by spin-torque-driven magnetization dynamics in patterned magnetic multilayer devices at room temperature, as a function of the angle of a magnetic field applied in the sample plane. We find strong…
The propensity of some materials and multilayers to have a magnetic field dependent resistance, called magnetoresistance, has found commercial applications such as giant magnetoresistance harddisk read heads. But magnetoresistance can also…
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the…
The discovery of the spin torque effect has made magnetic nanodevices realistic candidates for active elements of memory devices and applications. Magnetoresistive effects allow the read-out of increasingly small magnetic bits, and the spin…
Nanoporous alumina membranes produced by mild or hard anodisation in oxalic acid at potentials ranging from 5 - 140 V have a controllable pore surface area of up to 200 times the membrane area. They exhibit a saturating magnetic response…
In planar nano-magnetic devices magnetization direction is kept close to a given plane by the large easy-plane magnetic anisotropy, for example by the shape anisotropy in a thin film. In this case magnetization shows effectively in-plane…
Low-cost spintronic devices functioning in zero applied magnetic field are required for bringing the idea of spin-based electronics into the real-world industrial applications. Here we present first microwave measurements performed on…
We report on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+-(Ga,Mn)As/n+-GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local…
A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall…
Angular variation of giant magnetoresistance and spin-transfer torque in metallic spin-valve heterostructures is analyzed theoretically in the limit of diffusive transport. It is shown that the spin-transfer torque in asymmetric spin valves…
As a quasi-layered ferrimagnetic material, Mn$_3$Si$_2$Te$_6$ nanoflakes exhibit magnetoresistance behaviour that is fundamentally different from their bulk crystal counterparts. They offer three key properties crucial for spintronics.…
Integration of magneto-electric and spintronic sensors presents a massive potential for advancing flexible and wearable technology. Magnetic nanowires are core components for building such devices, and therefore it important to realize…
Half metals, which are amenable to perfect spin filtering, can be utilized for high-magnetoresistive devices. However, available half metals are very limited. Here, we demonstrate that materials with intrinsic spin-valley-mismatched (SVM)…
Transfer of angular momentum from a spin-polarized current to a ferromagnet provides an efficient means to control the dynamics of nanomagnets. A peculiar consequence of this spin-torque, the ability to induce persistent oscillations of a…
Semiconductor Bi$_2$O$_2$Se nanolayers of high crystal quality have been realized via epitaxial growth. These two-dimensional (2D) materials possess excellent electron transport properties with potential application in nanoelectronics. It…
We investigate theoretically the influence of the spin-orbit interaction of Rashba type on the magnetoresistance of a semiconducting ferromagnetic nanostructure with a laterally constrained domain wall. The domain wall is assumed sharp (on…
Recent fabrication of atomic precision nanodevices for spintronics greatly boosted their performance and also revealed new interesting features, as oscillating magnetoresistance with number of atomic layers in a multilayered structure. This…
The stable precession region in the spintronic oscillator with an in-plane magnetic tunnel junction is very narrow under small external fields, restricting its applications such as for microwave generators. Here we show that this region can…
In ferromagnetic nanostructures, the ballistic anisotropic magnetoresistance (BAMR) is a change in the ballistic conductance with the direction of magnetization due to spin-orbit interaction. Very recently, a directional dependent ballistic…
The directional coupler is a fundamental element of wave-based circuits. The state of the art for the spin-wave directional couplers consists mostly of macroscopic waveguides or two-dimensional planar systems. In this Letter, we present the…