Related papers: Nanosized Vertical Organic Spin-Valves
We investigate the low-temperature magneto-transport properties of individual Ge/Si core/shell nanowires. Negative magneto-conductance was observed, which is a signature of one-dimensional weak antilocalization of holes in the presence of…
The field of magnonics, which utilizes propagating spin waves for nano-scale transmission and processing of information, has been significantly advanced by the advent of the spin-orbit torque. The latter phenomenon can allow one to overcome…
We have measured spin transfer-induced dynamics in magnetic nanocontact devices having a perpendicularly magnetized Co/Ni free layer and an in-plane magnetized CoFe fixed layer. The frequencies and powers of the excitations agree well with…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
We fabricated Co nano-rings incorporated in the vertical pseudo-spin-valve nanopillar structures with deep submicron lateral sizes. It is shown that the current-perpendicular-to-plane giant magnetoresistance can be used to characterize a…
We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an…
Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we…
The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through…
Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…
Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves…
Vortices and antivortices are typical non uniform magnetization configurations that can be achieved in spin-torque oscillators with in-plane materials. Dynamics of a vortex-antivortex pair, namely vortex dipole, were predicted and already…
We examine the effect a spatially non-uniform spin current with a component polarized partially out of the plane has on a low saturation magnetization nanomagnet free layer. Micromagnetic simulations indicate that the spin torque efficiency…
We report the optical detection of magnons with a broad range of wavevectors in magnetic insulator Y3Fe5O12 thin films by proximate nitrogen-vacancy (NV) single-spin sensors. Through multi-magnon scattering processes, the excited magnons…
Depinning of nanoscale magnetic textures, such as domain walls, vortices and skyrmions, is of paramount importance for magnetic storage and information processing. We measure time-resolved magnetic switching statistics of an individual,…
The synthesis, morphology and magneto-transport properties of nanostructure-engineered charge-ordered Pr0.5Ca0.5MnO3 grown on ZnO nanowires are reported. The stability of the charge-ordering can be tuned, but more interestingly the sign of…
It has recently been recognized that the strong spin-orbit interaction present in solids can lead to new phenomena, such as materials with non-trivial topological order. Although the atomic spin-orbit coupling in carbon is weak, the…
Anisotropic magnetoresistance (AMR), originating from spin-orbit coupling (SOC), is the sensitivity of the electrical resistance in magnetic systems to the direction of spin magnetization. Although this phenomenon has been experimentally…
Organic electronics is very promising due to the flexibility, modifiability as well as variety of the available organic molecules. Efforts are going on to use organic materials for the realization of memory devices. In this regard resistive…
A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a…
Silicon has dominated the microelectronics industry for the last 50 years. With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is believed that silicon can become an excellent host material for an entirely new…