Related papers: Novel Electrostatically Doped Planar Field-Effect …

Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…

We investigate effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well (QW) in spin FETs using a Monte Carlo model. The considered scheme uses a heavily doped layer at the…

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits; many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has…

A new analytical model based on the WKB approximation for MOSFET-like one-dimensional ballistic transistors with Schottky-Barrier contacts has been developed for the drain current. By using a proper approximation of both the Fermi-Dirac…

We demonstrate the first \textit{all-metallic} mesoscopic superconductor-normal metal-superconductor (SNS) field-effect controlled Josephson transistors (SNS-FETs) and show their full characterization from the critical temperature $T_c$…

The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse…

Graphene based transistors relying on a conventional structure cannot switch properly because of the absence of an energy gap in graphene. To overcome this limitation, a barristor device was proposed, whose operation is based on the…

The potential barrier height at the interface formed by a metal contact and multiple one-dimensional (1D) quasi-ballistic channels in field-effect transistors (FETs) is evaluated across different carbon nanotube and nanowire device…

Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field…

Using calibrated simulations, we report a detailed study of the doping-less tunnel field effect transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. Without the need for any doping, the source and drain regions…

We report the fabrication of low-leakage rectifying Pt and Au Schottky diodes and Au-gated metal-semiconductor field effect transistors (MESFETs) on n-type SrTiO3 thin films grown by hybrid molecular beam epitaxy. In agreement with previous…

Topology is a key ingredient driving the emergence of quantum devices. Topological field-effect transistor (TFET) has been proposed to outperform the conventional FET by replacing the ON state with topology-protected quantized conductance,…

We propose, theoretically, a new type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. This spin field effect transistor (SFET) is constructed without any magnetic…

We report optically as well as electronically controlled, bio-electronic field-effect transistor (FET) based on the hybrid film of a photo-active purple membrane and electronically conducting single-walled carbon nanotubes (SWNTs). Two…

In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very…

Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical…

The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challenging. Here, we present a rewritable architecture based on…

Artificial neural networks (ANNs) have had an enormous impact on a multitude of sectors, from research to industry, generating an unprecedented demand for tailor-suited hardware platforms. Their training and execution is highly…

We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport…

High-performance single-wall carbon nanotube field-effect transistors (SWNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art…