Related papers: Magnetic Coupling in Ferromagnetic Semiconductor G…
In this paper, the effects of the external transverse magnetic field $B$ (perpendicular to the surface of the layers) on the electronic and excitonic properties are studied in the AA-stacked bilayer graphene (BLG). The effects of the…
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage,…
We investigate the exchange coupling between a ferrimagnetic insulator (FI) thulium iron garnet (TmIG) deposited on a gadolinium gallium garnet (GGG) substrate, which shows perpendicular magnetic anisotropy and a ferromagnetic metal (FMM)…
In this study, we consider a two-layer graphene structure stacked in the AA form and exposed to the influence of two different electric fields applied to different layers. The graphene layers are also subjected to an external magnetic field…
The interlayer magnetic interaction in bilayer CrI$_3$ plays a crucial role for its device applications. In this work, we studied the interlayer magnetic interaction in $\pi/3$-twisted bilayer CrI$_3$ using first-principles calculations.…
In this work, we study the magnetization dynamics in a ferromagnet/insulator/ferromagnet trilayer sandwiched between two superconductors (S/F/I/F/S heterostructure). It is well-known that a conceptually similar S/F/S system is a platform…
We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using…
Tunneling surface current through a thin ferromagnetic barrier in a three-dimensional topological insulator is shown to possess an extraordinary response to the orientation of barrier magnetization. In contrast to conventional…
Ability to tailor the nature of the magnetic coupling between two ferromagnetic electrodes can enable the realization of new spintronics device systems. This paper discusses our finding that deposition of an ultrathin tantalum (Ta) on the…
A two-layer Heisenberg antiferromagnet is studied as a model of the bilayer cuprate YBa$_2$Cu$_3$O$_6$. Quantum Monte Carlo results are presented for the temperature dependence of the spin correlation length, the static structure factor,…
When monolayers of two-dimensional (2D) materials are stacked into van der Waals structures, interlayer electronic coupling can introduce entirely new properties, as exemplified by recent discoveries of moir\'e bands that host highly…
Surface plasmons are the collective electron excitations in metallic systems and the associated electromagnetic wave usually has the transverse magnetic (TM) polarization. On the other hand, spin waves are the spin excitations perpendicular…
(Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of…
We develop a theory of the exchange interaction between ferromagnetic (FM) metallic grains embedded into insulating matrix by taking into account the Coulomb blockade effects. For bulk ferromagnets separated by the insulating layer the…
We investigate the effect of quantum confinement on the ferromagnetism of diluted magnetic semiconductor Ga$_{1-x}$Mn$_x$As using a combination of tight-binding and density functional methods. We observe strong majority-spin Mn $d$-As $p$…
The magnetic structures and interedge magnetic couplings of Fe, Co and Ni transition-metal terminated graphene nanoribbons with zigzag (ZGNR) and armchair (AGNR) edges are studied by first-principles calculations. Fe-ZGNR is found to show…
The magnetic properties of thin Pd fcc(001) films with embedded monolayers of Fe are investigated by means of first principles density functional theory. The induced spin polarization in Pd is calculated and analyzed in terms of quantum…
We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped…
Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device…
A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite…