Related papers: Magnetic Coupling in Ferromagnetic Semiconductor G…
The magnetic proximity effect (MPE), ferromagnetic coupling at the interface of magnetically dissimilar layers, attracts much attention as a promising pathway for introducing ferromagnetism into a high-mobility non-magnetic conducting…
Interdigitated transducers were used to generate and detect surface acoustic waves on a thin layer of (Ga,Mn)(As,P). The out-of-plane uniaxial magnetic anisotropy of this dilute magnetic semiconductor is very sensitive to the strain of the…
We use magneto-conductivity to study the magnetic proximity effect on surface states of doped topological insulators. Our bilayers consist of a layer of Fe$_7$Se$_8$, which is a metallic ferrimagnet and a layer of…
The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent…
Artificial spin-ice systems, consisting of arrays of interacting ferromagnetic nanoelements, offer a versatile platform for reconfigurable magnonics with potential in GHz logic and neuromorphic computing. However, weak dipolar coupling…
The manipulation of the antiferromagnetic interlayer coupling in the epitaxial Fe/Cr/Fe(001) trilayer system by moderate 5 keV He ion beam irradiation has been investigated experimentally. It is shown that even for irradiation with very low…
Magnetic proximity effect of a topological insulator in contact with a ferromagnet is reported in thin film bilayers of 15 nm thick $BiSbTe_3$ on either 15 or 40 nm thick $SrRuO_3$ on (100) $SrTiO_3$ wafers. Magneto transport results of the…
Motivated by the recent experiment in multilayered cuprate superconductors reporting the enhancement of antiferromagnetic order below the superconducting transition temperature, we study the proximity effect of the antiferromagnetic…
The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic…
Electrical control of magnetism in a two-dimensional (2D) semiconductor is of great interest for emerging nanoscale low-dissipation spintronic devices. Here, we propose a general approach of tuning magnetic coupling and anisotropy of a van…
We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0< B <20$ mT). We attribute this effect to weak localization. Observation of weak…
The interlayer coupling mediated by fermions in ferromagnets brings about parallel and anti-parallel magnetization orientations of two magnetic layers, resulting in the giant magnetoresistance, which forms the foundation in spintronics and…
Exchange coupling between two magnetic layers through an interlayer is of broad interest for numerous recent applications of nano-magnetic systems. In this Letter we study ferromagnetic exchange coupling through amorphous paramagnetic Fe-Ta…
Ferromagnetic resonance (FMR) in exchange-coupled ferromagnet-antiferromagnet (FM/AFM) bilayers commonly shows a moderate increase in the resonance frequency owing to the induced unidirectional anisotropy. Here we report a large FMR…
The magnetic properties of MnAs epilayers have been investigated for two different substrate orientations: GaAs(100) and GaAs(111). We have analyzed the magnetization reversal under magnetic field at low temperatures, determining the…
We demonstrate strong magnon-photon coupling of a thin-film permalloy device fabricated on a coplanar superconducting resonator. A coupling strength of 0.152 GHz and a cooperativity of 68 are found for a 30-nm-thick permalloy stripe. The…
We performed the detailed microscopic analysis of the inter-layer magnetic couplings for bilayer CrI$_3$. As the first step toward understanding the recent experimental observations and utilizing them for device applications, we estimated…
We investigate the doping of AA-stacked graphene bilayers. Applying a mean field theory at zero temperature we find that, at half-filling, the bilayer is an antiferromagnetic insulator. Upon doping, the homogeneous phase becomes unstable…
We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga1-xMnxAs grown by low temperature molecular beam epitaxy. Annealing at the optimal temperature of 250 C for less than 2 hours…
It was suggested that the two consecutive metamagnetic transitions and the large residual resistivity discovered in Sr$_3$Ru$_2$O$_7$ can be understood via the nematic order and its domains in a single layer system. However, a recently…