Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices

C. Gould; K. Pappert; C. Rüster; R. Giraud*; T. Borzenko; G. M. Schott; K. Brunner; G. Schmidt; L. W. Molenkamp

doi:10.1143/JJAP.45.3860

Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices

Mesoscale and Nanoscale Physics 2009-11-11 v1

Authors: C. Gould , K. Pappert , C. Rüster , R. Giraud* , T. Borzenko , G. M. Schott , K. Brunner , G. Schmidt , L. W. Molenkamp

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device geometries . Here we report on the simultaneous observation of both effects in a single nanodevice, which constitutes a significant step forward towards the eventual realization of spintronic devices which make use of domain walls to store, transport, and manipulate information.

Keywords

magnetic domain walls magnetic nanoparticles spin current

Cite

@article{arxiv.cond-mat/0602135,
  title  = {Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices},
  author = {C. Gould and K. Pappert and C. Rüster and R. Giraud* and T. Borzenko and G. M. Schott and K. Brunner and G. Schmidt and L. W. Molenkamp},
  journal= {arXiv preprint arXiv:cond-mat/0602135},
  year   = {2009}
}

Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices

Abstract

Keywords

Cite

Related papers