Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications
Abstract
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.
Cite
@article{arxiv.1804.06616,
title = {Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications},
author = {Hanan Mohammed and Hector Corte-León and Yurii P. Ivanov and Sergei Lopatin and Julian A. Moreno and Andrey Chuvilin and Akshaykumar Salimath and Aurelien Manchon and Olga Kazakova and Jurgen Kosel},
journal= {arXiv preprint arXiv:1804.06616},
year = {2018}
}